Semiconductor memory device

Abstract

A semiconductor memory device including different types of memories capable of attaining further miniaturization (thinning) and speed-up. This semiconductor memory device comprises a first memory including a bit line, a word line arranged to intersect with the bit line and storage means (43) arranged between the bit line and the word line and a second memory (13) different in type from the first memory. The first memory and the second memory are formed on a semiconductor substrate (31). When forming the first memory and the second memory on the same semiconductor substrate (31) in a stacked manner in this case, the thickness in the height direction is reduced, whereby further miniaturization (thinning) can be attained. Further, no wire having a large parasitic capacitance or solder may be employed for connection of the first memory and the second memory, whereby high-speed data transfer is enabled between the first memory and the second memory.

Dependencies are inferred from the claim text.