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AssigneeForschungszentrum Julich GmbH
InventorsDietmar Knipp, Helmut Stiebig, Hans-Joachim Buchner, Gerd Jager
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A photosensor for a transmitted-light method for detecting the intensity profile of an optical standing wave, with a transparent substrate, with a semiconductor component, and with at least three contacts, is characterized by the fact that two semiconductor components are connected with each other, such that the first semiconductor component and the second semiconductor component each have a photoelectrically active first semiconductor layer, and such that the two photoelectrically active semiconductor layers have a fixed phase relation to each other, which is adjusted by at least one photoelectrically inactive layer.
Photosensor for a transmitted-light method for detecting a direction of movement of the intensity maxima and intensity minima in an intensity profile, with an optical standing wave, with a transparent substrate (7), with two essentially transparent semiconductor components (9, 11), and with at least one contact layer (9.5) or insulating layer (13), wherein the first semiconductor component (9) is connected with the second semiconductor component (11) by the contact layer (9.5) or insulating layer (13), characterized by the fact that the first semiconductor component (9) has a first transparent photoelectrically inactive semiconductor layer (9.2, 9.4) and a first transparent photoelectrically active semiconductor layer (9.3), the second semiconductor layer (11) comprises a first transparent photoelectrically inactive semiconductor layer (11.2, 11.4) and a second transparent photoelectrically active semiconductor layer (11.3), and the two semiconductor components (9, 11) have a fixed phase relation to each other, wherein the first photoelectrically active semiconductor layers (9.3) of the first semiconductor component (9) has a layer thickness ds1 parallel to the direction of propagation of the standing wave (4) of ds1≦λ/4ns1, and the second photoelectrically active semiconductor layers (11.3) of the second semiconductor component (11) has a layer thickness ds2 parallel to the direction of propagation of the standing wave (4) of ds2≦λ/4ns2, wherein λ is the wavelength of the optical coherent wave, and ns1 and ns2 are the indices of refraction of the photoelectrically active first and second semiconductor layers (9.3, 11.2)
Photosensor in accordance with any of the preceding claims, characterized by the fact that the transparent substrate (7), on which the first semiconductor component (9) is applied, is transparent to the coherent radiation of wavelength λ.
Photosensor in accordance with any of the preceding claims, characterized by the fact that the transparent substrate (7) is composed of a material selected from the group comprising glass, quartz, and plastic film.
Photosensor in accordance with any of the preceding claims, characterized by the fact that each contact layer (9.1;
Photosensor in accordance with any of the preceding claims, characterized by the fact that a layer is formed on each semiconductor component (9) for the optical adaptation of the semiconductor component.
Photosensor in accordance with any of the preceding claims, characterized by the fact that the photosensor is designed as a one-dimensional or two-dimensional sensor field.
Dependencies are inferred from the claim text.