Silicone hyper-branched polymer surfactant, method of preparing the same and method of rinsing using a rinsing solution comprising the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKyoung-Mi Kim, Jae-Ho Kim, Young-Ho Kim, Sang-Woong Yoon, Boo-Deuk Kim, Shi-Yong Lee
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Abstract
A silicone hyper-branched polymer surfactant is included in a rinsing solution which may be used to remove photoresist residues. The silicone hyper-branched polymer surfactant is prepared by polymerizing a monomer represented by the following chemical formula (1), where R1 denotes a vinyl group and R2 denotes hydrogen, and includes both a hydrophobic group and a hydrophilic group. 1
Claims9
A silicone hyper-branched polymer surfactant prepared by polymerizing monomers represented by a chemical formula (1) and including a hydrophobic group and a hydrophilic group;
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- where R1 denotes a vinyl group and R2 denotes hydrogen.
A method of preparing a silicone hyper-branched polymer surfactant, comprising;
- preparing dimethyl silanol by hydrolyzing dimethyl chlorosilane;
- preparing a monomer represented by a chemical formula (1) of methyl divinyl siloxy dimethyl silane by reacting dimethyl silanol with divinyl methyl chlorosilane,
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- where R1 denotes a vinyl group and R2 denotes hydrogen;
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- preparing hyper-branched polysiloxy silane by polymerizing the monomer.
A rinsing solution comprising a silicone hyper-branched polymer surfactant prepared by polymerizing a monomer represented by a chemical formula (1) and de-ionized water, the surfactant including siloxane of which a terminal is replaced with a carboxyl group as a main backbone;
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- where R1 denotes a vinyl group and R2 denotes hydrogen.
A method of rinsing a semiconductor device comprising:
- forming a photoresist pattern on a semiconductor substrate by selectively exposing a photoresist film and then developing the photoresist film to selectively remove portions of the photoresist film;
- providing a solution onto the photoresist pattern and the semiconductor substrate, where the solution includes (a) a silicone hyper-branched polymer surfactant which includes siloxane of which a terminal is replaced with a carboxyl group as a main backbone, the surfactant being prepared by polymerizing a monomer represented by a chemical formula (1) and (b) de-ionized water,
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- wherein, R1 denotes a vinyl group and R2 denotes hydrogen;
- using the solution to separate a developing solution and photoresist residues which remain on the semiconductor substrate and the photoresist pattern from the semiconductor substrate and the photoresist pattern;
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- removing the separated developing solution and the photoresist residues.
Dependencies are inferred from the claim text.