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US 2004/0171502 A1Published application
Cleaning residues from semiconductor structures
AssigneeIntel Corporation
InventorsShan C. Clark, Vijayakumar S. Ramachandrarao, Robert B. Turkot JR.
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Abstract
Supercritical carbon dioxide may be utilized to remove resistant residues such as those residues left when etching dielectrics in fluorine-based plasma gases. The supercritical carbon dioxide may include an oxidizer in one embodiment.
Claims32
A method comprising:
- forming a clean resistant material over a dielectric on a semiconductor structure;
- and
- exposing said material to carbon dioxide and an oxidizer.
A cleaner comprising:
- supercritical carbon dioxide;
- and
- at least one oxidizer in supercritical carbon dioxide.
A method comprising:
- exposing a material on a semiconductor surface to a mixture of supercritical carbon dioxide and an oxidizer.
Dependencies are inferred from the claim text.