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AssigneeNGK Insulators, Ltd.
InventorsYoshimasa Kobayashi, Toru Hayase, Naomi Teratani, Jun Yoshikawa, Naohito Yamada
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An object of the present invention is to provide a novel aluminum nitride material of aluminum nitride base and having a low volume resistivity at room temperature. An aluminum nitride material has aluminum nitride as a main component and europium in a content of 0.03 mole percent or more calculated as the oxide, and the material has aluminum nitride and an europium-aluminum composite oxide phases. Alternatively, an aluminum nitride material has aluminum nitride as a main component and europium and samarium in a total content of 0.09 mole percent or more calculated as the oxides, and the material has aluminum nitride phase and a composite oxide phase containing at least europium and aluminum.
An aluminum nitride material comprising aluminum nitride as a main component and europium in a content of 0.03 mole percent or more calculated as the oxide, said material comprising aluminum nitride and europium-aluminum composite oxide phases.
An aluminum nitride material comprising aluminum nitride as a main component and europium and samarium in a total content of 0.09 mole percent or more calculated as the oxides, said material comprising aluminum nitride phase and a composite oxide phase containing at least europium and aluminum.
Dependencies are inferred from the claim text.