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US 2004/0171276 A1Published application
Semiconductor device having high-piemittivity insulation film and production method therefor
AssigneeNEC Corporation
InventorsHeiji Watanabe, Haruhiko Ono, Nobuyuki Ikarashi
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Abstract
A semiconductor device has a substrate and a dielectric film formed directly or indirectly on the substrate. The dielectric film contains a metal silicate film, and a silicon concentration in the metal silicate film is higher in a center portion in the film thickness direction than in an upper portion and in a lower portion.
Claims28
A semiconductor device comprising:
- a metal silicate film as a dielectric film,
- wherein said metal silicate film has a lower portion, a center portion and an upper portion, and
- a silicon concentration in said metal silicate film is higher in said upper portion than said center portion.
A semiconductor device comprising:
- a metal silicate film as a dielectric film,
- wherein said metal silicate film has a lower portion, a center portion and an upper portion, and
- a silicon concentration in said metal silicate film is higher in said upper portion and said lower portion than said center portion.
A semiconductor device comprising:
- a substrate;
- and
- a dielectric film directly or indirectly on said substrate,
- wherein said dielectric film contains a metal silicate film, and said metal silicate film has a lower portion, a center portion and an upper portion, and
- a silicon concentration in said metal silicate film is higher in said center portion than in said upper portion and in said lower portion.
2 more elements
A method of manufacturing a semiconductor device, comprising:
- (a) starting formation of a metal silicate film on a semiconductor substrate by supplying a first source gas which contains silicon in a first flow rate, and supplying a second source gas which contains at least one metal element in a second flow rate;
- and
- (b) continuing the formation of said metal silicate film on said semiconductor substrate by changing the flow rate of said first source gas from said first flow rate into a third flow rate, and by changing the flow rate of said second source gas from said second flow rate into a fourth flow rate,
- wherein a ratio of said first flow rate to said second flow rate is larger than said third flow rate and said fourth flow rate ratio.
1 more element
A semiconductor device comprising:
- a semiconductor substrate;
- a metal silicate film formed on said semiconductor substrate as a gate dielectric film;
- and
- a gate electrode formed on said metal silicate film,
- wherein a dielectric constant of said metal silicate film changes in a thickness direction of said metal silicate film, and is the largest in a center portion thereof.
2 more elements
A semiconductor device comprising:
- an insulating film formed on a semiconductor substrate;
- a lower electrode formed on said insulating film;
- a metal silicate film formed on said lower electrode;
- and
- an upper electrode formed on said metal silicate film,
- wherein a dielectric constant of said metal silicate film changes into a thickness direction of said metal silicate film and is the largest in a center portion.
3 more elements
Dependencies are inferred from the claim text.