Method of etching metallic materials to form a tapered profile
AssigneeApplied Materials, Inc.
InventorsGuangxiang Jin, Padmapani C. Nallan, Chun Yan, Ajay Kumar
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Abstract
A method of fabricating a structure having a tapered profile using a low temperature plasma etch (LTPE) process. In one embodiment, the LTPE process uses a gas comprising carbon tetrafluoride (CF4), trifluoromethane (CHF3), and nitrogen (N2) to fabricate the structure from a material layer of at least one of tantalum (Ta), tantalum nitride (TaN), and the like.
Claims16
A method of etching a metallic material to form a structure having a tapered profile, comprising:
- supplying a substrate comprising a metallic material layer;
- forming a patterned etch mask on the material layer;
- etching the material layer at a substrate temperature of less than about 50° C. using a gas comprising CF4, CHF3, and N2;
- and
- removing the etch mask.
A computer-readable medium containing software that when executed by a computer causes a semiconductor wafer processing system to fabricate a structure having a tapered profile using a method, comprising:
- supplying a substrate comprising a metallic material layer;
- forming a patterned etch mask on the material layer;
- etching the material layer at a substrate temperature of less than about 50° C. using a gas comprising CF4, CHF3, and N2;
- and
- removing the etch mask.
Dependencies are inferred from the claim text.