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US 2004/0171264 A1Published application
Methods of polishing, interconnect-fabrication, and producing semiconductor devices
AssigneeRenesas Technology Corp.
InventorsSeiichi Kondo, Noriyuki Sakuma, Yoshio Homma
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Abstract
The present invention provides a technique to reduce and suppress scratches and delamination, to suppress and control the development of dishing and erosion, and to polish at high polishing rate. Polishing is performed using a polishing solution, which contains an oxidizer, phosphoric acid, organic acid, a chemical to form inhibition layer, and water.
Claims5
A method for producing at least one semiconductor device, comprising the steps of
- preparing a base material having an impurity doping layer;
- forming an insulating film having an opening on the impurity doping layer;
- forming a barrier metal film on the insulating film;
- forming a Cu film on the barrier metal film;
- polishing the Cu film using a first polishing solution comprising an oxidizer, a phosphoric acid, a lactic acid, and an inhibitor comprising anti-corrosive agent;
- exposing the barrier metal film, upon said polishing, by mechanically scrubbing the Cu film;
- polishing the barrier metal film using a second polishing solution comprising an abrasive powder;
- and
- exposing the insulating film by mechanically scrubbing the barrier metal film.
6 more elements
A method for producing at least one semiconductor device, comprising the steps of
- preparing a base material having thereon an interconnect layer;
- forming an insulating film having an opening wherethrough the interconnect layer is exposed;
- forming a barrier metal film on the base material whereon the insulating film is formed;
- forming a Cu film on the barrier metal film;
- polishing the Cu film using a first polishing solution comprising an oxidizer, a phosphoric acid, a lactic acid, an inhibitor comprising anti-corrosive agent, and water;
- exposing the barrier metal film by mechanically scrubbing the Cu film;
- polishing using a second polishing solution comprising an abrasive powder;
- exposing the insulating film by mechanically scrubbing at least one of the Cu film and the barrier metal film;
- washing the base material;
- and
- drying the washed base material.
8 more elements
A method for producing at least one semiconductor device, comprising the steps of
- preparing a base material having thereon a metal interconnect layer;
- forming an insulating film having an opening on the metal interconnect layer;
- forming a barrier metal film on the base material whereon the insulating film is formed;
- forming a Cu film on the barrier metal film;
- polishing using a first polishing solution comprising hydrogen peroxide, phosphoric acid, lactic acid, and an inhibitor comprising anti-corrosive agent;
- mechanically scrubbing the Cu film upon said polishing using a first polishing solution;
- polishing using a second polishing solution after said mechanically scrubbing the Cu film;
- mechanically scrubbing the Cu film and the barrier metal film after said polishing using the second polishing solution;
- washing the base material;
- and
- drying the washed base material.
8 more elements
Dependencies are inferred from the claim text.