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US 2004/0171262 A1Published application
Method for peeling off semiconductor element and method for manufacturing semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsToru Takayama, Yasuyuki Arai
Life of this patent
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Abstract
A method for peeling off a thin film semiconductor element over an insulating surface by using a void, and a method for manufacturing a semiconductor device by transferring the peeled semiconductor element. According to the peeling method of the invention, a first base layer having a plurality of recessed portions is formed over a substrate, and a second base layer having a plurality of voids is formed on the recessed portions of the first base layer. On the second base layer, a third base layer is formed and a semiconductor element is formed thereon. Then, by separating the second base layer at an intersecting surface with the voids, the semiconductor element is peeled off from the substrate.
Claims41
A method for peeling off a semiconductor element comprising:
- forming over a substrate a first base layer having a plurality of recessed portions;
- forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions;
- forming a third base layer over the second base layer;
- forming a semiconductor element over the third base layer;
- and
- separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the substrate.
3 more elements
A method for peeling off a semiconductor element comprising:
- forming over a substrate a first base layer having a plurality of recessed portions;
- forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions;
- forming a third base layer over the second base layer;
- forming a semiconductor element over the third base layer;
- forming an opening portion which extends to a part of each of a plurality of the voids;
- and
- enlarging each of a plurality of the voids by diffusing an etchant into each of a plurality of the voids from the opening portion, and separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the substrate.
4 more elements
A method for peeling off a semiconductor element comprising:
- forming over a substrate a first base layer having a plurality of recessed portions;
- forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions;
- polishing a surface of the second base layer;
- forming a third base layer over the second base layer whose surface is polished;
- forming a semiconductor element over the third base layer;
- and
- separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the substrate.
4 more elements
A method for peeling off a semiconductor element comprising:
- forming over a substrate a first base layer having a plurality of recessed portions;
- forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions;
- polishing a surface of the second base layer;
- forming a third base layer over the second base layer whose surface is polished;
- forming a semiconductor element over the third base layer;
- and
- separating the second base layer with the first base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the substrate.
4 more elements
A method for peeling off a semiconductor element comprising:
- forming over a first substrate a first base layer having a plurality of recessed portions;
- forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions;
- polishing a surface of the second base layer;
- forming a third base layer over the second base layer whose surface is polished;
- forming a semiconductor element over the third base layer;
- forming a protective layer so as to cover the semiconductor element;
- attaching a second substrate to the protective layer and attaching a third substrate to the first substrate;
- and
- separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element and the second substrate from the first substrate and the third substrate.
6 more elements
A method for peeling off a semiconductor element comprising:
- forming over a first substrate a first base layer having a plurality of recessed portions;
- forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions;
- polishing a surface of the second base layer;
- forming a third base layer over the second base layer whose surface is polished;
- forming a semiconductor element over the third base layer;
- forming a protective layer so as to cover the semiconductor element;
- attaching a second substrate to the protective layer and attaching a third substrate to the first substrate;
- and
- separating the second base layer with the first base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element and the second substrate from the first substrate and the third substrate.
6 more elements
A method for peeling off a semiconductor element comprising:
- forming over a substrate a first base layer having a plurality of recessed portions;
- forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions;
- polishing a surface of the second base layer;
- forming a third base layer over the second base layer whose surface is polished;
- forming a semiconductor element over the third base layer;
- forming an opening portion which extends to a part of each of a plurality of the voids;
- and
- enlarging each of a plurality of the voids by diffusing an etchant into each of a plurality of the voids from the opening portion, and separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the substrate.
5 more elements
A method for peeling off a semiconductor element comprising:
- forming over a substrate a first base layer having a plurality of recessed portions;
- forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions;
- polishing a surface of the second base layer;
- forming a third base layer over the second base layer whose surface is polished;
- forming a semiconductor element over the third base layer;
- forming an opening portion which extends to a part of each of a plurality of the voids;
- and
- enlarging each of a plurality of the voids by diffusing an etchant into each of a plurality of the voids from the opening portion, and separating the second base layer with the first base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the substrate.
5 more elements
A method for peeling off a semiconductor element comprising:
- forming over a first substrate a first base layer having a plurality of recessed portions;
- forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions;
- polishing a surface of the second base layer;
- forming a third base layer over the second base layer whose surface is polished;
- forming a semiconductor element over the third base layer;
- forming an opening portion which extends to a part of each of a plurality of the voids on a region that is not provided with the semiconductor element;
- forming a protective layer so as to cover the semiconductor element;
- attaching a second substrate to the protective layer and attaching a third substrate to the first substrate;
- and
- enlarging each of a plurality of the voids by diffusing an etchant into each of a plurality of the voids from the opening portion, and separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element and the second substrate from the first substrate and the third substrate.
7 more elements
A method for peeling off a semiconductor element comprising:
- forming over a first substrate a first base layer having a plurality of recessed portions;
- forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions;
- polishing a surface of the second base layer;
- forming a third base layer over the second base layer whose surface is polished;
- forming a semiconductor element over the third base layer;
- forming an opening portion which extends to a part of each of a plurality of the voids on a region that is not provided with the semiconductor element;
- forming a protective layer so as to cover the semiconductor element;
- attaching a second substrate to the protective layer and attaching a third substrate to the first substrate;
- and
- enlarging each of a plurality of the voids by diffusing an etchant into each of a plurality of the voids from the opening portion, and separating the second base layer with the first base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element and the second substrate from the first substrate and the third substrate.
7 more elements
A method for peeling off a semiconductor element comprising:
- forming over a substrate a first base layer comprising a metal layer having a plurality of recessed portions and;
- forming a metal oxide layer on a surface of the metal layer by oxidizing;
- forming on the metal oxide layer a second base layer having a plurality of voids over a plurality of the recessed portions;
- polishing a surface of the second base layer;
- forming a third base layer over the second base layer whose surface is polished;
- forming a semiconductor element over the third base layer and crystallizing the metal oxide layer;
- and
- separating the second base layer at an intersecting surface with a plurality of the voids and a part of the crystallized metal oxide layer, thereby peeling off the semiconductor element from the substrate.
5 more elements
A method for peeling off a semiconductor element comprising:
- forming over a substrate a first base layer comprising a metal layer having a plurality of recessed portions and;
- forming a metal oxide layer on a surface of the metal layer by oxidizing;
- forming on the metal oxide layer a second base layer having a plurality of voids over a plurality of the recessed portions;
- polishing a surface of the second base layer;
- forming a third base layer over the second base layer whose surface is polished;
- forming a semiconductor element over the third base layer and crystallizing the metal oxide layer;
- and
- separating the second base layer with the first base layer at an intersecting surface with a plurality of the voids and a part of the crystallized metal oxide layer, thereby peeling off the semiconductor element from the substrate.
5 more elements
A method for peeling off a semiconductor element comprising:
- forming over a first substrate a first base layer comprising a metal layer having a plurality of recessed portions and;
- forming a metal oxide layer on a surface of the metal layer by oxidizing;
- forming on the metal oxide layer a second base layer having a plurality of voids over a plurality of the recessed portions;
- polishing a surface of the second base layer;
- forming a third base layer over the second base layer whose surface is polished;
- forming a semiconductor element over the third base layer and crystallizing the metal oxide layer;
- forming a protective layer so as to cover the semiconductor element;
- attaching a second substrate to the protective layer and attaching a third substrate to the first substrate;
- and
- separating the second base layer at an intersecting surface with a plurality of the voids and a part of the crystallized metal oxide layer, thereby peeling off the semiconductor element and the second substrate from the first substrate and the third substrate.
7 more elements
A method for peeling off a semiconductor element comprising:
- forming over a first substrate a first base layer comprising a metal layer having a plurality of recessed portions and;
- forming a metal oxide layer on a surface of the metal layer by oxidizing;
- forming on the metal oxide layer a second base layer having a plurality of voids over a plurality of the recessed portions;
- polishing a surface of the second base layer;
- forming a third base layer over the second base layer whose surface is polished;
- forming a semiconductor element over the third base layer and crystallizing the metal oxide layer;
- forming a protective layer so as to cover the semiconductor element;
- attaching a second substrate to the protective layer and attaching a third substrate to the first substrate;
- and
- separating the second base layer with the first base layer at an intersecting surface with a plurality of the voids and a part of the crystallized metal oxide layer, thereby peeling off the semiconductor element and the second substrate from the first substrate and the third substrate.
7 more elements
A method for manufacturing a semiconductor element comprising:
- forming over a first substrate a first base layer having a plurality of recessed portions;
- forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions;
- forming a third base layer over the second base layer;
- forming a semiconductor element over the third base layer;
- separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the first substrate;
- and
- attaching the peeled semiconductor element to a second substrate.
4 more elements
A method for manufacturing a semiconductor element comprising:
- forming over a first substrate a first base layer having a plurality of recessed portions;
- forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions;
- polishing a surface of the second base layer;
- forming a third base layer over the second base layer whose surface is polished;
- forming a semiconductor element over the third base layer;
- separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the first substrate;
- and
- attaching the peeled semiconductor element to a second substrate.
5 more elements
A method for manufacturing a semiconductor element comprising:
- forming over a first substrate a first base layer comprising a metal layer having a plurality of recessed portions and;
- forming a metal oxide layer on a surface of the metal layer by oxidizing;
- forming on the metal oxide layer a second base layer having a plurality of voids over a plurality of the recessed portions;
- polishing a surface of the second base layer;
- forming a third base layer over the second base layer whose surface is polished;
- forming a semiconductor element over the third base layer and crystallizing the metal oxide layer;
- separating the second base layer at an intersecting surface with a plurality of the voids and a part of the crystallized metal oxide layer, thereby peeling off the semiconductor element from the first substrate;
- and
- attaching the peeled semiconductor element to a second substrate.
6 more elements
A method for manufacturing a semiconductor element comprising:
- forming over a first substrate a first base layer having a plurality of recessed portions;
- forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions;
- forming a third base layer over the second base layer;
- forming a semiconductor element over the third base layer;
- forming an opening portion which extends to a part of each of a plurality of the voids;
- enlarging each of a plurality of the voids by diffusing an etchant into each of a plurality of the voids from the opening portion, and separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the first substrate;
- and
- attaching the peeled semiconductor element to a second substrate.
5 more elements
A method for manufacturing a semiconductor element comprising:
- forming over a first substrate a first base layer having a plurality of recessed portions;
- forming on the first base layer a second base layer having a plurality of voids over a plurality of the recessed portions;
- polishing a surface of the second base layer;
- forming a third base layer over the second base layer whose surface is polished;
- forming a semiconductor element over the third base layer;
- forming an opening portion which extends to a part of each of a plurality of the voids;
- enlarging each of a plurality of the voids by diffusing an etchant into each of a plurality of the voids from the opening portion, and separating the second base layer at an intersecting surface with a plurality of the voids, thereby peeling off the semiconductor element from the first substrate;
- and
- attaching the peeled semiconductor element to a second substrate.
6 more elements
Dependencies are inferred from the claim text.