Line edge roughness control
AssigneeLam Research Corporation
InventorsYoungjin Choi, Helen H. Zhu, Sangheon Lee, Sean S. Kang
Life of this patent
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Abstract
A method for etching a layer through a photoresist mask with an ARC layer between the layer to be etched and the photoresist mask over a substrate is provided. The substrate is placed into a processing chamber. An ARC open gas mixture is provided into the processing chamber. The ARC open gas mixture comprises an etchant gas and a polymerization gas comprising CO and CH3F. An ARC open plasma is formed from the ARC open gas mixture. The ARC layer is etched with the ARC open plasma until the ARC layer is opened. The ARC open gas mixture stopped before the layer to be etched is completely etched.
Claims20
A method for etching a layer through a photoresist mask with an ARC layer between the layer to be etched and the photoresist mask over a substrate, comprising:
- placing the substrate into a processing chamber;
- providing an ARC open gas mixture into the processing chamber, wherein the ARC open gas mixture comprises:
- an etchant gas;
- and
- a polymerization gas comprising CO and CH3F;
- forming an ARC open plasma from the ARC open gas mixture;
- etching the ARC layer with the ARC open plasma until the ARC layer is opened;
- and
- stopping the ARC open gas mixture before the layer to be etched is completely etched.
A method for forming a semiconductor device, comprising:
- placing a layer to be etched over a substrate;
- forming an organic ARC layer over the layer to be etched;
- forming a photoresist mask over the ARC layer;
- placing the substrate into a processing chamber;
- providing an ARC open gas mixture into the processing chamber, wherein the ARC open gas mixture comprises:
- an etchant gas;
- and
- a polymerization gas comprising CO and CH3F;
- forming an ARC open plasma from the ARC open gas mixture;
- etching the ARC layer with the ARC open plasma until the ARC layer is opened;
- stopping the ARC open gas mixture, so that none of the layer to be etched is etched by the ARC open plasma;
- providing an etch plasma different than the ARC open plasma;
- and
- etching the layer to be etched with the etch plasma.
Dependencies are inferred from the claim text.