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US 2004/0171259 A1Published application
Methods of forming capacitor constructions
AssigneeMicron Technology, Inc.
InventorsGurtej S. Sandhu, Trung Tri Doan
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AssigneeMicron Technology, Inc.
InventorsGurtej S. Sandhu, Trung Tri Doan
Estimating the term…
The invention includes a method of treating a predominantly inorganic dielectric material on a semiconductor wafer. A laser is utilized to generate activated oxygen species. Such activated oxygen species react with a component of the dielectric material to increase an oxygen content of the dielectric material. The invention also includes a method of forming a capacitor construction. A first capacitor electrode is formed to be supported by a semiconductor substrate. A dielectric material is formed over the first capacitor electrode. A precursor is provided at a location proximate the dielectric material, and a laser beam is focused at such location. The laser beam generates an activated oxygen species from the precursor. The activated oxygen species contacts the dielectric material. Subsequently, a second capacitor electrode is formed over the dielectric material.
A method of reducing current leakage through at least a portion of a dielectric material of a semiconductor construction comprising utilizing a laser to generate one or more activated species which react with a component of the dielectric material to reduce the leakage of current through the dielectric material.
A method of increasing a dielectric constant of at least a portion of a dielectric material of a semiconductor construction comprising utilizing a laser to generate one or more activated species which react with a component of the dielectric material to increase the dielectric constant of the dielectric material.
A method of treating a predominantly inorganic dielectric material on a semiconductor wafer comprising utilizing a laser to generate at least one activated oxygen species which reacts with a component of the dielectric material to increase an oxygen content of the dielectric material.
A method of treating a predominantly inorganic dielectric material on a semiconductor wafer comprising passing a laser beam across at least a portion of a surface of the dielectric material to generate at least one activated species which contacts the dielectric material.
A method of treating a predominantly inorganic dielectric material, comprising:
A method of forming a capacitor construction, comprising:
Dependencies are inferred from the claim text.