Method for reducing free surface roughness of a semiconductor wafer
AssigneeS.O.I.Tec Silicon on Insulator Technologies
InventorsEric Neyret, Ludovic Ecarnot
Life of this patent
Estimating the term…
Abstract
The invention provides a method of reducing the roughness of the free surface of a wafer of semiconductor material by applying a rapid thermal annealing process under a pure argon atmosphere for a time sufficient to uniformly heat and smooth the free surface of the wafer.
Claims20
A method for reducing roughness on a free surface of a semiconductor wafer which comprises applying a rapid thermal annealing process under a pure argon atmosphere for a time sufficient to uniformly heat and smooth the free surface of the wafer.
A method for reducing roughness of a free surface of a wafer of semiconductor material which comprises:
- placing a wafer into a chamber;
- introducing an annealing atmosphere of pure argon into the chamber at a predetermined pressure;
- heating the chamber to increase temperature inside the chamber at a predetermined rate up to a treatment temperature;
- maintaining the wafer in the chamber at the treatment temperature for a duration of a high-temperature dwell;
- and
- cooling the wafer at a rate of several tens of degrees Celsius per second.
Dependencies are inferred from the claim text.