Low-loss coplanar waveguides and method of fabrication
AssigneeMicron Technology, Inc.
InventorsKie Y. Ahn, Leonard Forbes
Life of this patent
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Abstract
Coplanar waveguides having a deep trench between a signal line and a ground plane and methods of their fabrication are disclosed. An oxide layer is provided over a silicon substrate and a photoresist is applied and patterned to define areas where the signal line and the ground plane will be formed. A barrier layer is provided over the oxide layer in the defined areas. A metal layer is then deposited over the barrier layer. An etch mask is deposited over the metal layer for the subsequent trench formation. The photoresist and the underlying portion of the oxide and barrier layers are removed and a deep trench is formed in the substrate between the signal line and the ground plane using etching through the mask.
Claims91
A method of forming a coplanar waveguide comprising the acts of:
- forming a signal conductor line over a substrate;
- forming at least one longitudinal ground conductor plane over said substrate and on a side of said signal conductor line, said ground conductor plane being spaced from said signal conductor line;
- and
- forming a trench in said substrate in an area between said at least one ground conductor plane and said signal conductor line.
A method of forming a coplanar waveguide comprising the acts of:
- forming a signal conductor line over a silicon substrate;
- forming at least one longitudinal ground conductor plane over said substrate and on a side of said signal conductor line, said ground conductor plane being spaced from said signal conductor line;
- and
- forming at least one trench in said silicon substrate in an area between said at least one ground conductor plane and said signal conductor line, said at least one trench having a depth of about 100,000 Angstroms to about 200,000 Angstroms and a width of about 100,000 Angstroms to about 150,000 Angstroms.
A method of forming a coplanar waveguide comprising the acts of:
- forming a signal conductor line over a silicon substrate;
- forming at least one longitudinal ground conductor plane over said substrate and on a side of said signal conductor line, said ground conductor plane being spaced from said signal conductor line;
- and
- forming at least one trench in said silicon substrate in an area between said at least one ground conductor plane and said signal conductor line, said at least one trench having a radius of about 50,000 Angstroms to about 100,000 Angstroms.
The method of claim 41, wherein said copper layer is exposed to silane at 300° C. to form said silicide layer.
A coplanar waveguide comprising:
- a substrate;
- a signal conductor line formed over said substrate;
- at least two longitudinal ground conductor planes formed over said substrate on both sides of said signal conductor line and spaced apart from said signal conductor line to form respective gaps;
- and
- at least two trenches formed in said substrate at said respective gaps.
A processor system comprising:
- a processor;
- and
- an integrated circuit coupled to said processor, at least one of said integrated circuit and processor comprising a substrate, a signal conductor line formed over said substrate, at least two longitudinal ground conductor planes formed over said substrate and on both sides of said signal conductor line and spaced apart from said signal conductor line to form respective gaps, and at least two trenches formed in said substrate at said respective gaps.
A coplanar waveguide comprising:
- a silicon substrate;
- a signal conductor line formed over said silicon substrate;
- at least two longitudinal ground conductor planes formed over said silicon substrate on both sides of said signal conductor line and spaced apart from said signal conductor line to form respective gaps;
- and
- at least two trenches formed in said silicon substrate at said respective gaps, each of said trenches having a depth of about 100,000 Angstroms to about 200,000 Angstroms and a width of about 100,000 Angstroms to about 150,000 Angstroms.
A coplanar waveguide comprising:
- a silicon substrate;
- a signal conductor line formed over said silicon substrate;
- at least two longitudinal ground conductor planes formed over said silicon substrate on both sides of said signal conductor line and spaced apart from said signal conductor line to form respective gaps;
- and
- at least two trenches formed in said silicon substrate at said respective gaps, each of said trenches having a radius of about 50,000 Angstroms to about 100,000 Angstroms.
Dependencies are inferred from the claim text.