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US 2004/0171245 A1Published application
Method of making an aligned electrode on a semiconductor structure
AssigneeEmcore Corporation
InventorMark Gottfried
Life of this patent
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Abstract
A method of making an electrode on a semiconductor structure comprises utilizing a mask to remove metal from a layer of metal on a semiconductor structure and then using the same mask to remove material from the semiconductor structure. The resulting structure can ultimately form an optoelectronic device, such as an LED.
Claims41
A method of making an electrode on a semiconductor structure, comprising:
- a) depositing metal on a surface of a semiconductor structure;
- b) forming a patterned mask over the metal on the semiconductor structure, the mask having at least one opening so that a first region is covered by the mask and a second region aligned with the at least one opening is left uncovered by the mask;
- c) removing metal aligned with the at least one opening in the second region, so as to reveal the top surface of the semiconductor structure in the second region;
- and
- d) removing material of the semiconductor structure aligned with the at least one opening in the second region.
2 more elements
A method of making a transparent electrode for light-emitting diode, comprising:
- a) depositing metal on a top surface of an semiconductor structure;
- b) defining a first region of the semiconductor structure for a first electrode by forming a mask over the metal, the mask having at least one opening so that the first region is covered by the mask and a second region is aligned with the at least one opening in the mask;
- c) removing metal aligned with the at least one opening in the mask in the second region so as to reveal the top surface of the semiconductor structure in the second region;
- and
- d) removing material from the semiconductor structure aligned with the at least one opening in the second region to form a second electrode surface for a second electrode, the second electrode surface being lower in elevation than the top surface of the semiconductor structure.
2 more elements
Dependencies are inferred from the claim text.