Selective spacer technology to prevent metal oxide formation during polycide reoxidation

A method of fabricating a semiconductor device, having one or more layers of materials deposited on a polysilicon layer, comprising the steps of:

• selectively etching the semiconductor device to form one or more features having sidewalls exposing the one or more layers of materials, wherein the polysilicon layer serves as an etch stop;
• selectively depositing a first spacer on the sidewalls of each of the one or more features;
• and
• reoxidizing the semiconductor device.

A method of forming a structure for controlling current flow between a source and a drain region in a semiconductor device, comprising the steps of:

• forming an insulating layer on a semiconductor wafer;
• forming a conductive layer over the insulating layer;
• forming a gate by etching, using the insulating layer as an etch stop, wherein the gate has sidewalls exposing the conductive layer and some portion of the insulating layer;
• selectively forming a first oxidation barrier on the sidewalls of the gate;
• and
• reoxidizing the structure.

A method of forming a structure for controlling current flow between a source and a drain region in a semiconductor device, wherein the semiconductor device is composed of a semiconductor wafer, an insulating layer disposed over the semiconductor layer, and a conductive layer disposed over the insulating layer, the method comprising the steps of:

• forming a gate having sidewalls exposing the conductive layer and some portion of the insulating layer;
• depositing a thin silicon nitride on the gate;
• avoiding depositing the thin silicon nitride on the source and the drain region;
• forming a first oxidation barrier on the sidewalls of the gate;
• and
• reoxidizing the structure.

A semiconductor device, comprising:

• a layer of polysilicon;
• one or more active areas;
• one or more features protruding from the polysilicon and having sidewalls, the one or more features separating the one or more active areas, each of the one or more features including:
• a portion of the polysilicon layer,
• one or more layers of conductive materials deposited on the layer of polysilicon, and
• a spacer selectively deposited on the sidewalls of the one or more features;
• and
• a layer of silicon oxide deposited on the semiconductor device, wherein the spacer is interposed between the layer of silicon dioxide and the sidewalls.

A semiconductor device, comprising:

• a layer of polysilicon;
• one or more active areas;
• and
• one or more features protruding from the polysilicon and having sidewalls, the one or more features separating the one or more active areas, each of the one or more features comprising:
• one or more layers of conductive materials deposited on the layer of polysilicon, at least one layer of which includes tungsten silicide;
• and
• a silicon nitride spacer selectively deposited on the sidewalls of the one or more features;
• and
• a layer of silicon oxide deposited on the semiconductor device, wherein the silicon nitride spacer is interposed between the layer of silicon oxide and the sidewalls of the one or more features.

A semiconductor device having a device having an electrode and an active area, wherein the electrode has a side and the active area has a surface, comprising:

• a spacer, wherein
• the spacer covers the electrode;
• and
• the spacer provides unobstructed physical communication with the active area.