Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate
OwnerJohn P. Snyder, John M. Larsoninventors
Life of this patent
Estimating the term…
Abstract
The invention is directed to a device for regulating the flow of electric current with high dielectric constant gate insulating layer and a source and/or drain forming a Schottky contact or Schottky-like region with a substrate and its fabrication method. In one aspect, the gate insulating layer has a dielectric constant greater than the dielectric constant of silicon. In another aspect, the current regulating device may be a MOSFET device, optionally a planar P-type or N-type MOSFET, having any orientation. In another aspect, the source and/or drain may consist partially or fully of a silicide.
Claims96
A method for manufacture of a device for regulating the flow of electrical current, the method comprising:
- providing for a semiconductor substrate;
- providing for an electrically insulating layer in contact with the semiconductor substrate, the insulating layer having a dielectric constant greater than 4.0;
- providing for a gate electrode in contact with at least a portion of the insulating layer;
- and
- providing a source electrode and a drain electrode in contact with the semiconductor substrate and proximal to the gate electrode wherein at least one of the source electrode and the drain electrode forms a Schottky contact or Schottky-like region with the semiconductor substrate.
A method for manufacture of a device for regulating the flow of electrical current, the method comprising:
- providing for a semiconductor substrate;
- providing for an electrically insulating layer in contact with the semiconductor substrate, the insulating layer having a dielectric constant greater than 7.6;
- providing for a gate electrode in contact with at least a portion of the insulating layer;
- and
- providing a source electrode and a drain electrode in contact with the semiconductor substrate and proximal to the gate electrode wherein at least one of the source electrode and the drain electrode forms a Schottky contact or Schottky-like region with the semiconductor substrate.
A method for manufacture of a device for regulating the flow of electrical current, the method comprising:
- providing for a semiconductor substrate;
- providing for an electrically insulating layer in contact with the semiconductor substrate, the insulating layer having a dielectric constant greater than 15;
- providing for a gate electrode in contact with at least a portion of the insulating layer;
- and
- providing a source electrode and a drain electrode in contact with the semiconductor substrate and proximal to the gate electrode wherein at least one of the source electrode and the drain electrode forms a Schottky contact or Schottky-like region with the semiconductor substrate.
A method for manufacture of a device for regulating the flow of electrical current, the method comprising:
- providing for a semiconductor substrate;
- providing for an electrically insulating layer in contact with the semiconductor substrate, the insulating layer having a dielectric constant greater than 4.0;
- providing for a gate electrode located in contact with at least a portion of the insulating layer;
- exposing the semiconductor substrate on one or more areas proximal to the gate electrode;
- providing for a thin film of metal on at least a portion of the exposed semiconductor substrate;
- and
- reacting the metal with the exposed semiconductor substrate such that a Schottky or Schottky-like source electrode and drain electrode are formed on the semiconductor substrate.
A method for manufacture of a device for regulating the flow of electrical current, the method comprising:
- providing for a semiconductor substrate;
- providing for an electrically insulating layer in contact with the semiconductor substrate, the insulating layer having a dielectric constant greater than 7.6;
- providing for a gate electrode located in contact with at least a portion of the insulating layer;
- exposing the semiconductor substrate on one or more areas proximal to the gate electrode;
- providing for a thin film of metal on at least a portion of the exposed semiconductor substrate;
- and
- reacting the metal with the exposed semiconductor substrate such that a Schottky or Schottky-like source electrode and drain electrode are formed on the semiconductor substrate.
A method for manufacture of a device for regulating the flow of electrical current, the method comprising:
- providing for a semiconductor substrate;
- providing for an electrically insulating layer in contact with the semiconductor substrate, the insulating layer having a dielectric constant greater than 15;
- providing for a gate electrode located in contact with at least a portion of the insulating layer;
- exposing the semiconductor substrate on one or more areas proximal to the gate electrode;
- providing for a thin film of metal on at least a portion of the exposed semiconductor substrate;
- and
- reacting the metal with the exposed semiconductor substrate such that a Schottky or Schottky-like source electrode and drain electrode are formed on the semiconductor substrate.
A device for regulating the flow of electrical current, the device comprising:
- a semiconductor substrate;
- a gate electrode;
- an electrically insulating layer located between the gate electrode and the semiconductor substrate, the insulating layer having a dielectric constant greater than 4.0;
- and
- a source electrode and a drain electrode in contact with the semiconductor substrate and proximal to the gate electrode wherein at least one of the source electrode and the drain electrode forms a Schottky contact or Schottky-like region with the semiconductor substrate.
A device for regulating the flow of electrical current, the device comprising:
- a semiconductor substrate;
- a gate electrode;
- an electrically insulating layer located between the gate electrode and the semiconductor substrate, the insulating layer having a dielectric constant greater than 7.6;
- and
- a source electrode and a drain electrode in contact with the semiconductor substrate and proximal to the gate electrode wherein at least one of the source electrode and the drain electrode forms a Schottky contact or Schottky-like region with the semiconductor substrate.
A device for regulating the flow of electrical current, the device comprising:
- a semiconductor substrate;
- a gate electrode;
- an electrically insulating layer located between the gate electrode and the semiconductor substrate, the insulating layer having a dielectric constant greater than 15;
- and
- a source electrode and a drain electrode in contact with the semiconductor substrate and proximal to the gate electrode wherein at least one of the source electrode and the drain electrode forms a Schottky contact or Schottky-like region with the semiconductor substrate.
Dependencies are inferred from the claim text.