Method for reducing surface roughness of polysilicon films for liquid crystal displays
AssigneeToppoly Electronics Corp.
InventorsChu-Jung Shih, Yaw-Ming Tsai
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Abstract
A semiconductor method for a liquid crystal display that includes providing a substrate, providing a layer of insulating material over the substrate, depositing a layer of amorphous silicon over the layer of insulating material, crystallizing the layer of amorphous silicon to form a layer of polysilicon, treating the layer of polysilicon to change the properties of a surface of the layer of polysilicon, and smoothing the surface of the layer of polysilicon.
Claims19
A semiconductor method for a liquid crystal display, comprising:
- providing a substrate;
- providing a layer of insulating material over the substrate;
- depositing a layer of amorphous silicon over the layer of insulating material;
- and
- crystallizing the layer of amorphous silicon to form a layer of polysilicon;
- treating the layer of polysilicon to change the properties of a surface of the layer of polysilicon;
- smoothing the surface of the layer of polysilicon.
A method for making semiconductor device, comprising:
- forming an insulating layer over a substrate;
- forming an amorphous silicon layer over the insulating layer;
- forming a polysilicon layer by crystallizing the amorphous silicon layer;
- changing properties of a surface of the polysilicon layer;
- and
- smoothing a surface of the changed polysilicon layer.
A method for making semiconductor device, comprising:
- forming an insulating layer over a substrate;
- forming an amorphous layer over the insulating layer;
- forming a polysilicon layer using the amorphous layer;
- oxidizing a surface of the polysilicon layer;
- and
- etching the oxidized surface of the polysilicon layer to provide a smooth surface for the polysilicon layer.
Dependencies are inferred from the claim text.