Method of detaching a thin film at moderate temperature after co-implantation
AssigneesCea, Soitec
InventorsIan Cayrefourcq, Nadia Ben Mohamed, Christelle Lagahe-Blanchard, Nguyet-Phuong Nguyen
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Abstract
A method of detaching a thin film from a source substrate comprises the following steps: implanting ions or gaseous species in the source substrate so as to form therein a buried zone weakened by the presence of defects; splitting in the weakened zone leading to the detachment of the thin film from the source substrate. Two species are implanted of which one is adapted to form defects and the other is adapted to occupy those defects, the detachment being made at a temperature lower than that for which detachment could be obtained with solely the dose of the first species.
Claims22
A method of detaching a thin film from a source substrate comprising the following steps:
- implanting ions or gaseous species in the source substrate so as to form therein a buried zone weakened by the presence of defects;
- splitting in the weakened zone leading to the detachment of the thin film from the source substrate
- this method being characterized in that
- the implanting step comprises, on the one hand, a sub-step according to which a first species is implanted which is adapted to form defects and, on the other hand, substantially at the same depth, a sub-step according to which a second species adapted to occupy defects is implanted, the implantation of the first step being made at a sufficient dose to permit, alone, detachment of the thin film at a first temperature, and the implantation of the second species being made at a dose lower than the dose of the first species, and
- the splitting is carried out at a second temperature that is less than the first temperature.
Dependencies are inferred from the claim text.