Semiconductor device with spiral inductor and method for fabricating semiconductor integrated circuit device
AssigneeKabushiki Kaisha Toshiba
InventorYoshihiro Minami
Life of this patent
Estimating the term…
Abstract
A spiral inductor comprising: a substrate; a protruding portion which is formed on the top face of the substrate and the top of which serves as a dummy element for controlling a chemical mechanical polishing process; and a conductive layer which is formed on the substrate so as to have a spiral shape and which serves as an induction element, wherein the protruding portion is formed in a region other than a region directly below the conductive layer.
Claims20
A spiral inductor comprising:
- a substrate;
- a protruding portion which is formed on the top face of the substrate and the top of which serves as a dummy element for controlling a chemical mechanical polishing process;
- and
- a conductive layer which is formed on the substrate so as to have a spiral shape and which serves as an induction element,
- wherein said protruding portion is formed in a region other than a region directly below said conductive layer.
A spiral inductor comprising:
- a substrate;
- a protruding portion which is formed on the top face of the substrate and the top of which serves as a dummy element for controlling a chemical mechanical polishing process;
- a conductive layer which is formed on the substrate so as to have a spiral shape and which serves as an induction element;
- and
- a protective film which is formed between the substrate and said conductive layer and prevents silicidation of said protruding portion.
A method for fabricating a semiconductor integrated circuit device comprising a substrate, and a spiral inductor which is formed on the substrate and which includes a spiral conductive layer serving as an induction element, said method comprising:
- forming an element isolating groove in the surface of the substrate so that a protruding portion is formed in a region other than the region in which said conductive layer is formed, the top of said protruding portion serving as a dummy element for controlling a chemical mechanical polishing process.
A method for fabricating a semiconductor integrated circuit device comprising a substrate, and a spiral inductor which is formed on the substrate so as to have a spiral shape and which includes a conductive layer serving as an induction element, said method comprising:
- forming an element isolating groove in the surface of the substrate so that a protruding portion is formed, the top thereof serving as a dummy element for controlling a chemical mechanical polishing process;
- depositing a protective film on the substrate;
- selectively removing said protective film in a region other than a region in which said induction element is to be formed, by patterning using a photoresist;
- and
- silicidating the surface of the substrate.
Dependencies are inferred from the claim text.