Isotopically pure silicon-on-insulator wafers and method of making same
OwnerStephen J. Burdeninventor
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Abstract
A semiconductor wafer structure having a device layer, an insulating layer, and a substrate which is capable of supporting increased semiconductor device densities or increased semiconductor device power. One or more of the layers includes an isotopically enriched semiconductor material having a higher thermal conductivity than semiconductor material having naturally occurring isotopic ratios. The insulating layer may be formed by implanting atoms or ions into a semiconductor layer and subjecting the wafer to heat treatment resulting in the implanted atoms or ions reacting with the semiconductor layer to form an insulating layer.
Claims21
A multi-layer semiconductor wafer structure comprising:
- asubstrate;
- an insulating layer on said substrate;
- and
- a top device layer of semiconducting material on said insulating layer,
- wherein at least one of said substrate, insulating layer and device layer includes isotopically enriched elements of silicon, germanium, or silicon-germanium alloys.
A multi-layer semiconductor wafer structure comprising:
- a substrate;
- a semiconductor material layer;
- an insulating layer;
- and
- a device layer of semiconducting material,
- wherein at least one of said semiconductor material and device layers includes isotopically enriched elements of silicon, germanium, or silicon-germanium alloys.
Dependencies are inferred from the claim text.