Method of manufacturing a semiconductor device having improved gate structure, and a semiconductor device manufactured thereby
AssigneeRenesas Technology Corp.
InventorMotoshige Igarashi
Life of this patent
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Abstract
A gate insulating film is formed on a semiconductor substrate, and a gate electrode is formed by deposition of semiconductor material on the gate insulating film. An amorphous layer is then formed along the surface of or inside the gate electrode, and side walls are formed on the gate electrode. Finally, impurities are implanted into the semiconductor substrate by ion implantation while the gate electrode and the side walls are used as masks.
Claims18
A method of manufacturing a semiconductor device comprising the steps of:
- forming a gate insulating film on a semiconductor substrate;
- forming a gate electrode by deposition of semiconductor material on said gate insulating film;
- forming an amorphous layer in said gate electrode;
- forming side walls on said gate electrode;
- and
- implanting impurities into said semiconductor substrate by ion implantation while said gate electrode and the side walls are used as masks.
A method of manufacturing a semiconductor device comprising the steps of:
- forming a gate insulating film on a semiconductor substrate;
- forming a gate electrode so as to comprise a plurality of separated layers by deposition of semiconductor material on said gate insulating film;
- forming side walls on said gate electrode;
- and
- implanting impurities into said semiconductor substrate by ion implantation while said gate electrode and the side walls are used as masks.
A method of manufacturing a semiconductor device comprising the steps of:
- forming gate insulating films in respective regions on a semiconductor substrate having different conductivity types;
- forming gate electrodes by deposition of semiconductor material on each of said gate insulating films;
- forming each of nitrogen-containing layers, which are different in nitrogen concentration from each other, along the surface of and/or inside each of said gate electrodes so as to correspond to the conductivity types of said regions of said semiconductor substrate;
- forming side walls on each of said gate electrodes;
- and
- implanting impurities into said semiconductor substrate while said gate electrodes and said side walls are used as masks.
A semiconductor device comprising:
- a semiconductor substrate;
- a gate insulating film on said semiconductor substrate;
- a gate electrode in which an amorphous layer having a grain size of 0.05 μm or less is formed along the surface of or inside said gate electrode and/or along the side surfaces of said gate electrode;
- and
- a conductive region which is formed in said semiconductor substrate by ion implantation after formation of said amorphous layer.
Dependencies are inferred from the claim text.