Method of selective removal of SiGe alloys
AssigneeAmberWave Systems Corporation
InventorsRichard Hammond, Matthew Currie
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Abstract
A method is disclosed of forming buried channel devices and surface channel devices on a heterostructure semiconductor substrate. In an embodiment, the method includes the steps of providing a structure including a first layer having a first oxidation rate disposed over a second layer having a second oxidation rate wherein the first oxidation rate is greater than the second oxidation rate, reacting said first layer to form a sacrificial layer, and removing said sacrificial layer to expose said second layer.
Claims27
A method of forming a semiconductor substrate, comprising:
- providing a structure comprising a first layer having a first oxidation rate disposed over a second layer having a second oxidation rate, wherein the first oxidation rate is greater than the second oxidation rate;
- reacting said first layer to form a sacrificial layer;
- and
- removing said sacrificial layer to expose said second layer.
A method of forming devices on a substrate said method comprising the steps of:
- providing a structure comprising a SiGe layer disposed over a strained semiconductor layer;
- selectively removing said SiGe layer in a first region but not in a second region such that a surface channel device may be formed on said first region and a buried channel device may be formed on said second region.
A method of forming devices on a substrate, said method comprising the steps of:
- providing a structure comprising a SiGe layer disposed over a strained semiconductor layer;
- oxidizing said SiGe layer to form a SiGe oxide in a first region but not in a second region of said structure;
- removing said SiGe oxide;
- forming a surface channel device in said first region and a buried channel device in said second region such that the strained semiconductor layer serves as the channel layer of each device.
A structure comprising:
- a strained semiconductor layer;
- a surface channel device;
- and
- a buried channel device, wherein said surface and buried channel devices include a channel comprising said strained semiconductor layer.
Dependencies are inferred from the claim text.