Selective silicidation scheme for memory devices

A method of manufacturing a memory device, comprising:

• providing a workpiece, the workpiece comprising a semiconductor material;
• forming at least one memory cell within the workpiece;
• forming at least one first conductive line proximate the at least one memory cell, wherein the first conductive line provides access to the at least one memory cell;
• depositing a first insulating layer over the at least one memory cell and first conductive lines;
• depositing a second insulating layer over the first insulating layer;
• depositing a photoresist over the second insulating layer;
• removing a portion of the photoresist;
• etching the second insulating layer and first insulating layer, exposing at least a top surface of the first conductive lines, leaving a portion of the first insulating layer on the sidewalls of the first conductive lines;
• forming a silicide material on at least the first conductive line top surface;
• depositing an insulative material over at least the silicide material;
• opening the insulative material over the active region;
• filling the opening over the active region with a conductive material;
• and
• forming at least one second conductive line over the conductive material.

A semiconductor device, comprising:

• a workpiece, the workpiece comprising a semiconductor material, the workpiece including at least one memory cell formed therein, the memory cell including an active region;
• at least one first conductive line proximate the at least one memory cell, wherein the first conductive line provides access to the at least one memory cell, the first conductive line having a top surface and sidewalls;
• a first insulating layer formed over the at least one memory cell and at least one first conductive line;
• a spacer formed over at least one sidewall of the at least one first conductive line;
• and
• a silicide material formed over the active region of the memory cell.