Fabrication method for semiconductor integrated devices
AssigneeRenesas Technology Corp.
InventorsYasuhiro Shimamoto, Masahiko Hiratani, Yuichi Matsui, Toshihide Nabatame
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Abstract
A process for forming the lower and upper electrodes of a high dielectric constant capacitor in a semiconductor device from an organoruthenium compound by chemical vapor deposition. This chemical vapor deposition technique employs an organoruthenium compound, an oxidizing gas, and a gas (such as argon) which is hardly adsorbed to the ruthenium surface or a gas (such as ethylene) which is readily adsorbed to the ruthenium surface. This process efficiently forms a ruthenium film with good conformality in a semiconductor device.
Claims8
A process for producing a semiconductor device, comprising the step of:
- forming a ruthenium film on the surface of a substrate which has a concave portion, said forming step utilizing chemical vapor deposition from an organoruthenium compound as a precursor in the presence of an oxidizing gas and a gas which has a lower tendency to be adsorbed to a surface of the ruthenium film than the oxidizing gas and which at least partially interrupts the oxidizing gas from reacting with the organoruthenium compound,
- wherein a partial pressure of said oxidizing gas is smaller than a partial pressure of said gas which has a lower tendency to be adsorbed to a surface of the ruthenium film, and
- further wherein said oxidizing gas has a partial pressure of less than 0.01 Torr in a film-forming chamber in which the chemical vapor deposition takes place.
A process for producing a semiconductor device, said process comprising the steps of:
- providing a substrate;
- depositing, via chemical vapor deposition, a ruthenium film on said substrate from an organoruthenium compound as a precursor in the presence of an oxidizing gas and a gas which at least partially limits the ability of the oxidizing gas to be adsorbed to a surface of the ruthenium film,
- wherein a partial pressure of said oxidizing gas is smaller than a partial pressure of said gas which at least partially limits the ability of the oxidizing gas to be adsorbed to a surface of the ruthenium film, and
- further wherein said oxidizing gas has a partial pressure of less than 0.01 Torr in a film-forming chamber in which the chemical vapor deposition takes place.
Dependencies are inferred from the claim text.