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US 2004/0170930 A1Published application
Method of forming a resist pattern and resist pattern forming apparatus
AssigneeTDK Corporation
InventorsYuuichi Kawaguchi, Hiroaki Takahata, Hisaji Oyake
Life of this patent
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Abstract
A resin layer including a benzophenone compound is formed on a surface of a glass substrate, and a photoresist layer is formed on a surface of the resin layer. The photoresist layer is irradiated with a laser beam with a wavelength of 100 nm to 300 nm to form a latent image, and a resist pattern with recessed and protruding parts are formed in the photoresist layer by developing the photoresist layer in which the latent image has been formed.
Claims4
A method of forming a resist pattern comprising steps of:
- forming a resin layer, which includes a benzophenone compound, on a substrate surface;
- forming a photoresist layer on a surface of the resin layer;
- forming a latent image by irradiating the photoresist layer with an exposure beam with a wavelength of 100 nm to 300 nm inclusive;
- and
- forming a resist pattern with recessed and protruding parts in the photoresist layer by developing the photoresist layer in which the latent image has been formed.
2 more elements
A resist pattern forming apparatus, comprising:
- a resin layer forming device that forms a resin layer including a benzophenone compound on a substrate surface;
- a photoresist layer forming device that forms a photoresist layer on a surface of the resin layer;
- an exposure device that forms a latent image by irradiating the photoresist layer with an exposure beam with a wavelength of 100 nm to 300 nm inclusive;
- and a developing device that forms a resist pattern with recessed and protruding parts in the photoresist layer by developing the photoresist layer in which the latent image has been formed.
1 more element
Dependencies are inferred from the claim text.