Ether monomers and polymers having multi-ring structures, and photosensitive polymers and resist compositions obtained from the same
AssigneeSamsung Electronics Co., Ltd.
InventorsHyun-Woo Kim, Sang-Gyun Woo
Life of this patent
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AssigneeSamsung Electronics Co., Ltd.
InventorsHyun-Woo Kim, Sang-Gyun Woo
Estimating the term…
Provided are a variety of monomers suitable of producing photosensitive polymers, that are in turn, useful in photoresist compositions, through radical (cationic) polymerization including at least one multi-ring alkenyl ethers and one α-fluorinated acrylate. The resulting photoresist compositions exhibit both acceptable resistance to dry etching processing and light transmittance suitable for use with various light sources such as KrF excimer lasers, ArF excimer lasers or F2 excimer lasers, in a photolithography process to produce fine photoresist patterns. In addition to the multi-ring alkenyl ethers and α-fluorinated acrylates, additional monomers comprising one or more cyclic aliphatic and heterocyclic compounds, both unsubstituted and substituted, in particular dihydropyrans, may be incorporated into the photosensitive polymers. Photosensitive polymers can then be produced by combining these various monomer units to form copolymers, terpolymers and higher order polymers, an exemplary embodiment of which may be generally represented by the formula V: 1
A photosensitive copolymer including an α-fluorinated acrylate monomer and an alkenyl ether monomer having the formula I
A photosensitive terpolymer including an α-fluorinated acrylate monomer, a first alkenyl ether monomer and a second alkenyl ether monomer having the formula II
A photosensitive terpolymer including an α-fluorinated acrylate monomer, an alkenyl ether monomer and a dihydropyran having the formula III
A photosensitive terpolymer including first and second α-fluorinated acrylate monomers and an alkenyl ether monomer having the formula IIB
A photosensitive tetrapolymer including first and second α-fluorinated acrylate monomers and first and second alkenyl ether monomers having the formula IV
A photosensitive pentapolymer including first and second α-fluorinated acrylate monomers, first and second alkenyl ether monomers and a dihydrofuran having the formula V:
A method of forming a photosensitive polymer comprising:
A photoresist composition suitable for forming patterns having a line/space pattern of less than 0.25 μm when exposed to light having a wavelength of 157 nm comprising:
A photosensitive polymer including at least one α-fluorinated acrylate monomer and at least one alkenyl ether monomer having the formula V:
Dependencies are inferred from the claim text.