Precursor solution and method for controlling the composition of MOCVD deposited PCMO
AssigneeSharp Laboratories of America, Inc.
InventorsTingkai Li, Wei-Wei Zhuang, Lawrence J. Charneski, David R. Evans, Sheng Teng Hsu
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Abstract
A single solution MOCVD precursor is provided for depositing PCMO. An MOCVD process is provided for controlling the composition of PCMO by determining the deposition rate of each metal component within the precursor solution and determining the molar ratio of the metals based on the deposition rates of each within the temperature ranges for substrate temperature and vaporizer temperature, and the composition of PCMO to be deposited. The composition of the PCMO is further controlled by adjusting the substrate temperature, the vaporizer temperature or both.
Claims25
A single solution MOCVD precursor for depositing PCMO comprising a Pr(tmhd)3 precursor, a Mn(tmhd)3 precursor and a calcium precursor dissolved in an organic solvent.
An MOCVD process for depositing PCMO comprising:
- a) providing a substrate within an MOCVD chamber;
- b) introducing oxygen into the MOCVD chamber;
- c) heating the substrate to a predetermined substrate temperature;
- d) heating a vaporizer attached to the MOCVD chamber to a predetermined vaporizer temperature;
- e) introducing a single solution precursor comprising a Pr precursor, a Ca precursor and an Mn precursor dissolved in an organic solvent at a predetermined molar ratio into the vaporizer, whereby the precursor is vaporized to form a precursor vapor;
- and
- f) delivering the precursor vapor into the chamber using a carrier gas, whereby the precursor vapor deposits a thin film of PCMO on the substrate.
Dependencies are inferred from the claim text.