Forming a dielectric layer using a hydrocarbon-containing precursor
AssigneeIntel Corporation
InventorsRobert P. Meagley, Michael D. Goodner, Andrew W. Ott, Grant M. Kloster, Michael L. McSwiney, Bob E. Leet
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Abstract
In one embodiment, the present invention includes introducing a precursor containing hydrocarbon substituents and optionally a second conventional or hydrocarbon-containing precursor into a vapor deposition apparatus; and forming a dielectric layer having the hydrocarbon substituents on a substrate within the vapor deposition apparatus from the precursor(s). In certain embodiments, at least a portion of the hydrocarbon substituents may be later removed from the dielectric layer to reduce density thereof.
Claims36
A method comprising:
- forming a dielectric layer on a substrate, the dielectric layer comprising hydrocarbon substituents;
- and
- removing at least a portion of the hydrocarbon substituents from the dielectric layer to reduce density of the dielectric layer.
A method comprising:
- introducing a conventional precursor into a vapor deposition apparatus;
- introducing a second precursor into the vapor deposition apparatus, the second precursor comprising a silicon-based precursor including hydrocarbon substituents;
- and
- forming a dielectric layer having the hydrocarbon substituents on a substrate within the vapor deposition apparatus from the conventional precursor and the second precursor.
A method comprising:
- introducing a single precursor into a reaction chamber, the single precursor comprising silicon and a sacrificial group comprising carbon;
- and
- forming a dielectric layer on a substrate within the reaction chamber using the single precursor.
A method comprising:
- introducing a single precursor into a reaction chamber, the single precursor comprising a first functional group comprising an organic porogen and a second functional group;
- and
- forming a dielectric layer having the organic porogen on a substrate within the reaction chamber using the single precursor.
A precursor comprising:
- silicon;
- a first functional group comprising an organic porogen, the first functional group attached to the silicon;
- and
- a sacrificial functional group attached to the silicon.
Dependencies are inferred from the claim text.