Hafnium silicide target for forming gate oxide film and method for preparation thereof
AssigneeNippon Mining & Metals Co., Ltd.
InventorsShuichi Irumata, Ryo Suzuki
Life of this patent
Estimating the term…
Abstract
The present invention relates to a hafnium silicide target for forming a gate oxide film composed of HfSi1.02-2.00. Obtained is a hafnium silicide target superior in workability and embrittlement resistance, and suitable for forming a HfSiO film and HfSiON film that may be used as a high dielectric gate insulation film in substitute for a SiO2 film, and to the manufacturing method thereof.
Claims9
A hafnium silicide sintered target for forming a gate oxide film characterized in that composed of HfSi1.02-2.00, containing a mixed phase principally including a HfSi phase and a HfSi2 phase, and the relative density is 95% or more.
(Delete)
(Delete)
A manufacturing method of a hafnium silicide sintered target for forming a gate oxide film characterized in that the powder of the composition composed of HfSi1.02-2.00 is synthesized, pulverized to be 100 mesh or less, and thereafter hot pressed at 1400° C. to 1535° C.
Dependencies are inferred from the claim text.