Multi-beam semiconductor laser element

A multi-beam semiconductor laser device comprising:

• a common substrate within which are formed high density defective regions originating from seed crystal areas and meeting locations and low density defective regions each of which is located between adjacent ones of the seed crystal areas and the meeting locations, the high density defective regions and the low density defective regions being periodically and alternately arranged in parallel with each other in the form of stripes;
• and a plurality of laser oscillating regions formed on the common substrate and capable of emitting laser beams respectively,
• wherein each of the laser oscillating regions is located in a different one of the low density defective regions, and wherein
• X1≧0.5 μm
• X2≧0.5 μm
• where X1 is a distance between the each of the laser oscillating regions and one of the seed crystal areas, and X2 is a distance between the each of the laser oscillating regions and one of the meeting locations.

A multi-beam semiconductor laser device comprising:

• a common substrate within which are formed high density defective regions originating from seed crystal areas and meeting locations and low density defective regions each of which is located between adjacent ones of the seed crystal areas and the meeting locations, the high density defective regions and the low density defective regions being periodically and alternately arranged in parallel with each other in the form of stripes;
• and a plurality of laser oscillating regions formed on the common substrate and capable of emitting laser beams respectively,
• wherein the laser oscillating regions are located in the low density defective regions which are arranged adjacent to each other with the seed crystal areas and the meeting locations inbetween, and wherein
• X1≧0.5 μm
• X2≧0.5 μm
• where X1 is a distance between one of the laser oscillating regions and one of the seed crystal areas, and X2 is a distance between one of the laser oscillating regions and one of the meeting locations.

A multi-beam semiconductor laser device comprising:

• a common substrate within which are formed high density defective regions originating from seed crystal areas and meeting locations and low density defective regions each of which is located between adjacent ones of the seed crystal areas and the meeting locations, the high density defective regions and the low density defective regions being periodically and alternately arranged in parallel with each other in the form of stripes;
• and a plurality of laser oscillating regions formed on the common substrate and capable of emitting laser beams respectively,
• wherein at least two of the laser oscillating regions are located in each of the low density defective regions, and wherein
• X1≧0.5 μm
• X2≧0.5 μm
• where X1 is a distance between one of the laser oscillating regions and one of the seed crystal areas, and X2 is a distance between one of the laser oscillating regions and one of the meeting locations.

A multi-beam semiconductor laser device comprising:

• a common substrate within which are formed high density defective regions originating from seed crystal areas and meeting locations and low density defective regions each of which is located between adjacent ones of the seed crystal areas and the meeting locations, the high density defective regions and the low density defective regions being periodically and alternately arranged in parallel with each other in the form of stripes;
• and a plurality of laser oscillating regions formed on the common substrate and capable of emitting laser beams respectively,
• wherein the laser oscillating regions are located on every other region of the low density defective regions, and wherein
• X1≧0.5 μm
• X2≧0.5 μm
• where X1 is a distance between one of the laser oscillating regions and one of the seed crystal areas, and X2 is a distance between one of the laser oscillating regions and one of the meeting locations.

A multi-beam semiconductor laser device having a common substrate provided with a mesa structure on which a plurality of laser oscillating regions are fabricated in the form of stripes, the multi-beam semiconductor laser device comprising:

• a first electrode comprising stripe electrodes provided for each of the plurality of laser oscillating regions for functioning as one of a p-type electrode and an n-type electrode of the each laser oscillating region;
• and
• a second electrode located aside of the mesa structure on the common substrate as a common electrode to at least two of the plurality of the laser oscillating regions for functioning as the other of the p-type electrode and the n-type electrode of each of the two laser oscillating regions and as an opposite electrode to the first electrode,
• wherein the plurality of the first electrode have different areas corresponding to the distances thereof from the common electrode in order to flow a substantially same current from the first electrode.