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US 2004/0170076 A1Published application
Thin film magnetic memory device suppressing influence of magnetic field noise from power supply wiring
AssigneeRenesas Technology Corp.
InventorHideto Hidaka
Life of this patent
Estimating the term…
Abstract
A main power supply line and a main ground wiring provided to supply power from one side (a first direction) of a memory region, a main power supply line and a main ground wiring provided to supply the power from the other side (a second direction opposite to the first direction) of the memory region are provided in a column direction. A bit line driver arranged on one side is supplied with power from one side, and a bit line driver arranged on the other side is supplied with the power from the other side. As a result, no current path is formed in a region of the power supply lines on the selected memory region.
Claims10
A thin film magnetic memory device comprising:
- a plurality of memory regions, arranged in a column direction, each having a plurality of memory cells arranged in a matrix, wherein each of said memory regions includes:
- a plurality of bit lines provided in correspondence with memory cell columns, respectively;
- a first driver band arranged in a first direction of said plurality of bit lines, and supplied with power for supplying a data write current to at least one bit line among said plurality of bit lines;
- and
- a second driver band arranged in a second direction opposite to said first direction of said plurality of bit lines, and supplied with the power for supplying said data write current to at least one bit line among said plurality of bit lines,
- said thin film magnetic memory device further comprises:
- a first pair of power supply line, arranged in the column direction, for supplying the power to said first driver band from said first direction;
- and
- a second pair of power supply line, arranged in the column direction, for supplying the power to said second driver band from said second direction,
- each of said first and second pair of power supply lines includes first and second power lines supplying a first voltage and a second voltage, respectively, and
- when data is written, the first driver band corresponding to the selected memory region selected by an externally applied address designation among said plurality of memory regions is connected to one of the first and second power lines of said first pair of power supply line in accordance with written data, and the second driver band corresponding to said selected memory region is connected to the other one of said first and second power lines of said second pair of power supply line in accordance with said written data.
8 more elements
A thin film magnetic memory device comprising:
- a plurality of memory regions, arranged in a column direction, each having a plurality of memory cells arranged in a matrix, wherein
- each of said memory regions includes:
- a plurality of bit lines provided in correspondence with memory cell columns, respectively;
- a first driver band arranged in a first direction of said plurality of bit lines, and supplied with power for supplying a data write current to at least one bit line among said plurality of bit lines;
- and
- a second driver band arranged in a second direction opposite to said first direction of said plurality of bit lines, and supplied with the power for supplying said data write current to at least one bit line among said plurality of bit lines,
- said thin film magnetic memory device further comprises:
- a first power supply line, arranged in correspondence with said first driver band along the column direction, for supplying a first voltage from said first direction;
- and
- a second power supply line, arranged in correspondence with said second driver band along the column direction, for supplying a second voltage from said second direction,
- when data is written, one of the first and second driver bands corresponding to the selected memory region selected from said plurality of memory regions in accordance with written data is connected to one of the corresponding first and second power supply lines, and the other one of said corresponding first and second driver bands is electrically connected to the second voltage.
8 more elements
A thin film magnetic memory device comprising:
- a plurality of memory regions, arranged in a row direction, each having a plurality of memory cells arranged in a matrix, wherein
- each of said memory regions includes:
- a plurality of digit lines provided in correspondence with memory cell rows, respectively;
- and
- a digit line driver band arranged in a first direction of said plurality of digit lines, and supplied with a first voltage for supplying a data write current to at least one digit line selected from said plurality of digit lines,
- said first direction and said second direction opposite to said first direction of each of said digit lines are electrically coupled to a second voltage, and
- said thin film magnetic memory device further comprises a first power supply line, electrically coupled to said digit line driver band in the row direction, for supplying said first voltage from said first direction.
4 more elements
Dependencies are inferred from the claim text.