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US 2004/0170060 A1Published application
Semiconductor storage device preventing data change due to accumulative disturbance
AssigneesRenesas Technology Corp., Renesas Solutions Corporation
InventorShinichi Ishimoto
Life of this patent
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Abstract
A refresh zone detection part divides a block of a semiconductor memory into refresh zone units for executing refresh, and detects the refresh zone including the sector of the writing target. A refresh execution part sequentially refreshes the sectors included in the refresh zone detected by refresh zone detection part, every time data is written to a sector. Thus, it is possible to prevent the number of rewritings to a specific sector from increasing, and the refresh can prevent data change due to accumulative disturbance.
Claims9
A semiconductor storage device comprising:
- a nonvolatile memory to which data is written in a sector unit;
- and
- a data rewriting unit rewriting data in the nonvolatile memory, wherein
- each sector in said nonvolatile memory includes:
- a data area into which data is stored;
- and a refresh mark into which information indicative of whether refresh has been performed or not is stored, and
- said data rewriting unit includes a refresh execution unit referring to said refresh mark and determining whether the sector is refreshed or not, thereby executing the refresh.
4 more elements
Dependencies are inferred from the claim text.