Electrically programmable resistance cross point memory sensing method

Abstract

A method of reading a selected resistive memory bit having its output connected to a bitline, which is connected to a plurality of unselected electrically parallel resistive memory bits, is provided. The method comprises selecting the resistive memory bit to be read by applying a read voltage to an input of the resistive memory bit, and unselecting the plurality of unselected resistive memory bits by applying a deselect voltage to all inputs of the unselected resistive memory bits. The current out of the bitline is then sensed by a current sensor. A memory device is also provided comprising a plurality of resistive memory bits connected to a shared bitline, a means for selecting a single bit from the plurality of resistive memory bits, a means for deselecting the remaining, unselected bits from the plurality of resistive memory bits and a means for sensing the output current from the bitline.

Dependencies are inferred from the claim text.