Rewritable memory with non-linear memory element
AssigneeUnity Semiconductor Corporation
InventorsDarrell Rinerson, Christophe J. Chevallier, Steven W. Longcor, Wayne Kinney, Edmond R. Ward, Steve Kuo-Ren Hsia
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Abstract
A re-writable memory that uses resistive memory cell elements with non-linear IV characteristics is disclosed. Non-linearity is important in certain memory arrays to prevent unselected cells from being disturbed and to reduce the required current. Non-linearity refers to the ability of the element to block the majority of current up to a certain level, but then, once that level is reached, the element allows the majority of the current over and above that level to flow.
Claims18
A 2-terminal re-writable memory cell, comprising:
- a non-linear resistive memory element that can store non-volatile information;
- wherein
- the resistance of the non-linear resistive memory element can be reversibly written to different values, whereby the resistance of the non-linear resistive memory is used to determine the stored information;
- and
- the memory cell is accessed through exactly 2 terminals.
A re-writable memory comprising:
- a plurality of x-direction conductive lines, each conductive line being patterned in a first direction;
- a plurality of y-direction conductive lines, each conductive line being patterned in a second direction orthogonal to the first direction;
- a plurality of memory cells, each memory cell being accessible for reading or writing through selection of an x-direction conductive line and a y-direction conductive line;
- wherein
- a memory cell is located at or near the intersection of the selected x-direction conductive array line and the selected y-direction conductive array line;
- and
- the memory cells include a non-linear resistive element.
A memory cell comprising:
- a bottom electrode;
- a top electrode;
- and
- at least one conductive metal oxide sandwiched in-between the bottom and top electrodes;
- wherein the memory cell exhibits a non-linear IV characteristic between the top and bottom electrodes.
A memory cell, comprising:
- a first terminal that is capable of being placed at a first voltage potential;
- a non-linear device that is electrically coupled to the first terminal;
- a non-volatile resistive memory element that is electrically coupled to the non-linear device;
- and
- a second terminal that is capable of being placed at a second voltage potential and is electrically coupled to the non-volatile resistive memory element;
- wherein the resistance of the non-volatile resistive memory element can be reversibly written to different values, whereby the resistance of the non-volatile resistive memory is used to determine the stored information.
Dependencies are inferred from the claim text.