Device for coupling drive circuitry to electroabsorption modulator

A monolithic electroabsorption modulator (EAM) and coupling capacitor comprising:

• a substrate formed of a first type semiconductor material with a top surface and a bottom surface;
• an EAM-side capacitor electrode coupled to the bottom surface of the substrate;
• a capacitor dielectric layer coupled to the EAM-side capacitor electrode;
• a non-EAM-side capacitor electrode coupled to the capacitor dielectric layer;
• an EAM waveguide formed on the top surface of the substrate and including an electroabsorption portion;
• and
• an EAM second type semiconductor layer formed on the EAM waveguide.

A method of manufacturing a monolithic electroabsorption modulator (EAM) and coupling capacitor, comprising the steps of:

• a) providing a substrate formed of a first type semiconductor material with a top surface and a bottom surface;
• b) forming an EAM waveguide layer on the top surface of the substrate, the EAM waveguide layer including an electroabsorption portion;
• c) forming an EAM second type semiconductor layer on the EAM waveguide layer;
• d) etching the EAM second type semiconductor layer and the EAM waveguide layer to form an EAM second type semiconductor region and an EAM waveguide;
• e) forming an EAM-side capacitor electrode on the substrate;
• f) forming a capacitor dielectric layer electrically coupled to the EAM-side capacitor electrode;
• and
• g) forming a non-EAM-side capacitor electrode on the capacitor dielectric layer.

A monolithic electroabsorption modulator (EAM) and coupling capacitor comprising:

• a substrate including a first type semiconductor material portion, the first type semiconductor material portion having a top surface;
• an EAM electrode electrically coupled to the first type semiconductor material portion of the substrate;
• an EAM waveguide formed on the top surface of the first type semiconductor material portion of the substrate and including an electroabsorption portion;
• an EAM second type semiconductor layer formed on the EAM waveguide;
• an EAM-side capacitor electrode electrically coupled to the EAM second type semiconductor layer;
• a capacitor dielectric layer formed on the EAM-side capacitor electrode;
• and
• a non-EAM-side capacitor electrode formed on the capacitor dielectric layer.

A method of manufacturing a monolithic electroabsorption modulator (EAM) and coupling capacitor, comprising the steps of:

• a) providing a substrate including a first type semiconductor material portion, the first type semiconductor material portion having a top surface;
• b) forming an EAM waveguide layer on the top surface of the first type semiconductor material portion of the substrate, the EAM waveguide layer including an electroabsorption portion;
• c) forming an EAM second type semiconductor layer on the EAM waveguide layer;
• d) etching the EAM second type semiconductor layer and the EAM waveguide layer to form an EAM second type semiconductor region and an EAM waveguide;
• e) forming an EAM electrode on the first type semiconductor material portion of the substrate;
• f) forming an EAM-side capacitor electrode on the EAM second type semiconductor region;
• g) forming a capacitor dielectric layer on the EAM-side capacitor electrode;
• and
• h) forming a non-EAM-side capacitor electrode on the capacitor dielectric layer.

A method of manufacturing a monolithic co-sided electroabsorption modulator (EAM) and coupling capacitor, comprising the steps of:

• a) providing a non-conducting substrate with a top surface;
• b) forming a co-sided EAM on the top surface of the non-conducting substrate, formation of the co-sided EAM including the steps of;
• b1) forming an EAM first type base layer with a top surface on the top surface of the non-conducting substrate;
• b2) forming an EAM waveguide layer on the EAM first type base layer, the EAM waveguide layer including an electroabsorption portion;
• b3) forming an EAM second type semiconductor layer on the EAM waveguide layer;
• and
• b4) etching the EAM second type semiconductor layer and the EAM waveguide layer to form an EAM second type semiconductor region and EAM waveguide and expose at least one side portion of the top surface of the EAM first type base layer;
• b5) forming an EAM insulating layer on the at least one side portion of the top surface of the EAM first type base layer;
• b6) etching the EAM insulating layer to expose at least one contact region of the at least one side portion of the top surface of the EAM first type base layer;
• and
• c) forming at least one capacitor on the top surface of the non-conducting substrate, formation of each capacitor including the steps of;
• c1) forming a non-EAM-side capacitor electrode on the top surface of the non-conducting substrate;
• c2) forming a capacitor dielectric layer on the non-EAM-side capacitor electrode;
• and
• c3) forming an EAM-side capacitor electrode on the capacitor dielectric layer.