A microlithography system that illuminates a selected region on a pattern-defining reticle with an energy beam, and projects and focuses the energy beam, propagating from the reticle, onto a selected region on a sensitive substrate so as to transfer the pattern from the reticle to the sensitive substrate, the microlithography system comprising:
- a reticle-vacuum chamber containing a reticle stage on which the reticle is mounted, the reticle-vacuum chamber being defined by respective walls and at least one respective bulkhead;
- a wafer-vacuum chamber containing a wafer stage on which the sensitive substrate is mounted, the wafer-vacuum chamber being defined by respective walls and at least one respective bulkhead;
- a respective instrument mounted on the bulkhead of the reticle-vacuum chamber and configured to measure a characteristic of the reticle;
- a respective instrument mounted on the bulkhead of the wafer-vacuum chamber and configured to measure a characteristic of the substrate;
- and
- a deformation-reducing device for reducing deformation of the respective bulkhead of at least one of the chambers in response to a differential of pressure inside the respective chamber relative to pressure outside the respective chamber.