Amplifier apparatus and method thereof
AssigneeFreescale Semiconductor, Inc.
InventorsJoseph Staudinger, Monte Gene Miller
Life of this patent
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Abstract
A power amplifier device having a conductive structure overlying a dielectric layer. The conductive structure has a first conductive structure portion that is substantially electrically isolated from a second conductive structure portion. A first plurality of bond wires couple the first conductive structure portion to an amplifying device, while a second plurality of bond wires couple the second conductive structure portion to the amplifying device.
Claims27
An amplifying apparatus comprising:
- a first dielectric layer;
- a conductive structure, overlying the dielectric layer, comprising a first conductive structure portion and a second conductive portion, the first conductive portion substantially electrically isolated from the second conductive structure portion;
- a first plurality of conductive elements coupled to the first conductive structure portion;
- and
- a second plurality of conductive elements coupled to the second conductive structure portion, wherein the first plurality of conductive elements is mutually exclusive from the second plurality of conductive elements.
An amplifying apparatus comprising:
- an output node;
- a load line structure;
- and
- a plurality of conductive elements coupling the output node to the load line structure, each one of the conductive elements having a geometric property, wherein a first portion of the plurality of conductive elements have a first characteristic for their geometric property, and a second portion of the plurality of conductive elements have a second characteristic for their geometric property, where the second characteristic is different than the first characteristic.
A method of forming an amplifier comprising the steps of:
- coupling a first plurality of bond wires, each having a first characteristic for a geometric property, to a transistor node;
- and
- coupling a second plurality of bond wires, each having a second characteristic for the geometric property, to the transistor node, wherein the first plurality of bond wires in mutually exclusive to the second plurality of bond wires and the second characteristic is different than the first characteristic.
A method comprising the steps of:
- determining a first desired load impedance at a first frequency of operation for a power amplifier;
- determining a second desired load impedance for a second frequency of operation for the power amplifier;
- defining a first plurality of conductive elements to facilitate achieving the first desired load impedance at the first frequency;
- and
- defining a second plurality of conductive elements to facilitate achieving the second desired load impedance at the second frequency.
A wireless communication apparatus comprising:
- a data conditioning module;
- a power amplifier module comprising
- an input node coupled to the data conditioning module;
- a transistor having a control input coupled to the input node and a current electrode;
- a current electrode bus coupled to the current electrode;
- a first dielectric layer;
- a conductive structure, overlying the dielectric layer, comprising a first conductive structure portion isolated from a second conductive structure portion;
- a first plurality of conductive elements coupled to the current electrode bus and to the first conductive structure portion;
- a second plurality of conductive elements coupled to the current electrode bus and to the second conductive structure portion, wherein the first plurality of conductive elements is mutually exclusive from the second plurality of conductive elements;
- and
- an output coupled to the first conductive structure portion and to the second conductive structure portion.
Dependencies are inferred from the claim text.