US 2004/0169287 A1 · Flip-chip type semiconductor device and method of manufacturing the same

Abstract

In a flip-chip type semiconductor device, a pad electrode and a passivation film are formed on a semiconductor substrate. An insulating resin layer is formed on the passivation film, and an opening is formed above the electrode. A pad electrode adhesive metal film is formed on the substrate like a re-wiring pattern, and a plating feed layer metal film and a Cu plating layer are sequentially formed on the metal film to form a wiring layer. A metal post electrode is formed on the wiring layer. A solder bump is formed on the post electrodes, a support plate in which holes each having a diameter larger than the diameter of the solder bump are formed at positions adjusted to the solder bumps is arranged, and an insulating resin layer is formed between the support plate and the semiconductor substrate. Therefore, a stress acting on the solder bump is moderated.

Claims11

Dependent claims

A flip-chip type semiconductor device comprising:

a semiconductor substrate;
a pad electrode formed on the semiconductor substrate;
an insulating film formed on the entire surface of the semiconductor substrate, said insulating film having an opening above the pad electrode;
a wiring portion patterned on the pad electrode and the insulating film;
an electrode formed on the wiring portion;
a metal bump formed on the electrode;
a support plate having holes each having a diameter larger than the diameter of the metal bump and formed at positions adjusted to the metal bumps, said support plate being arranged above the semiconductor substrate with an appropriate interval between said support plate and said semiconductor substrate such that the metal bump projects from said support plate;
and
an insulating resin layer formed between the semiconductor substrate and the support plate, said electrode being buried in the insulating resin layer.

6 more elements

A method of manufacturing a flip-chip type semiconductor device comprising the steps of:

forming a pad electrode on a semiconductor substrate;
forming an insulating film on the entire surface of the semiconductor substrate and removing the insulating film on the pad electrode to form an opening;
forming a metal thin film layer on the entire surface of the semiconductor substrate and patterning the metal thin film layer to form a wiring portion;
forming a resist film on the entire surface of the semiconductor substrate, patterning the resist film to remove the resist film on the wiring portion, and forming an opening to form an electrode in the opening;
forming a metal bump on the electrode;
arranging a support plate above the semiconductor substrate with an appropriate interval between said support plate and said semiconductor substrate, said support plate having holes each having a diameter larger than the diameter of the metal bump and formed at positions adjusted to the positions where the metal bump are-arranged;
and
injecting an insulating resin between the semiconductor substrate and the support plate.

5 more elements

Dependencies are inferred from the claim text.

Flip-chip type semiconductor device and method of manufacturing the same

Life of this patent

Flip-chip type semiconductor device and method of manufacturing the same

Life of this patent

Abstract

Claims11