Ultra low k plasma CVD nanotube/spin-on dielectrics with improved properties for advanced nanoelectronic device fabrication
AssigneeApplied Materials, Inc.
InventorsSon Van Nguyen, Kang Sub Yim
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Abstract
A method for forming a conductive feature in a low k dielectric layer comprising a layer of nanotubes and a low k material between the nanotubes is provided. The low k dielectric layer may be deposited on a seed layer as a blanket layer that is patterned such that a conductive feature may be formed in the low k dielectric layer. Alternatively, the low k dielectric layer may be selectively deposited on a patterned seed layer between a sacrificial layer of a substrate. The sacrificial layer may be removed and replaced with conductive material to form a conductive feature in the low k dielectric layer.
Claims46
A method of forming a conductive feature, comprising:
- depositing a catalytic seed layer on a substrate;
- depositing a layer of nanotubes comprising carbon on the catalytic seed layer;
- forming an interconnect opening in the layer of nanotubes;
- and
- depositing a conductive material in the interconnect opening.
A method of forming a conductive feature, comprising:
- depositing a catalytic seed layer on a substrate;
- depositing a layer of nanotubes comprising carbon on the catalytic seed layer;
- depositing a low k dielectric material such that at least a portion of the low k dielectric material is deposited between adjacent nanotubes;
- patterning and etching through the layer of nanotubes to form an interconnect opening;
- and
- depositing a conductive material in the interconnect opening.
A method of forming a conductive feature, comprising:
- depositing a catalytic seed layer on a substrate;
- depositing a sacrificial layer on the catalytic seed layer;
- patterning and etching the sacrificial layer to form an opening in the sacrificial layer that exposes the catalytic seed layer;
- depositing a layer of nanotubes comprising carbon on exposed regions of the catalytic seed layer;
- depositing a low k dielectric material such that at least a portion of the low k dielectric material is deposited between adjacent nanotubes;
- removing the sacrificial layer to form an interconnect opening;
- and
- depositing a conductive material in the interconnect opening.
A method of forming a dual damascene structure, comprising:
- depositing a first catalytic seed layer on a substrate;
- depositing a first layer of nanotubes comprising carbon on the first catalytic seed layer;
- depositing a first low k dielectric material such that at least a portion of the first low k dielectric material is deposited between adjacent nanotubes of the first layer of nanotubes;
- depositing an etch stop over the first low k dielectric material;
- patterning the etch stop to define a vertical interconnect opening;
- depositing a second catalytic seed layer over the etch stop;
- depositing a second layer of nanotubes comprising carbon on the second catalytic seed layer;
- depositing a second low k dielectric material such that at least a portion of the second low k dielectric material is deposited between adjacent nanotubes of the second layer of nanotubes;
- patterning a horizontal interconnect opening in the second layer of nanotubes and the second low k dielectric material;
- etching the substrate to form a horizontal interconnect and a vertical interconnect;
- and
- depositing a conductive material to fill the horizontal interconnect and the vertical interconnect.
A low k dielectric film, comprising a layer of nanotubes comprising carbon in a matrix of a low k dielectric material.
A structure, comprising:
- a low k dielectric film comprising a layer of nanotubes comprising carbon in a matrix of a low k dielectric material;
- and
- a conductive feature in the low k dielectric film.
A dual damascene structure, comprising:
- a first dielectric layer defining a vertical interconnect;
- an etch stop on the first dielectric layer;
- and
- a second dielectric layer on the etch stop and defining a horizontal interconnect, wherein at least one of the first dielectric layer and the second dielectric layer is a low k dielectric film comprising a layer of nanotubes comprising carbon in a matrix of a low k dielectric material.
Dependencies are inferred from the claim text.