Chip shaped electronic device and a method of producing the same

A chip shaped electronic device comprising:

• an element body including zinc oxide material layers and internal electrode layers and having a size of 0.6 mm or less×0.3 mm or less×a thickness of 0.3 mm or less;
• and
• a pair of terminal electrodes formed on an outer surface of the element body, wherein a distance between facing end portions on the same plane (a gap between terminals) is 50 μm or more;
• wherein when assuming a minimum distance from an outermost side of said internal electrode layer in the stacking direction to a surface of said element body is 1 and measuring an ion intensity ratio of Li and Zn, (Li/Zn), in a range from the surface of said element body to a depth of (0.9×1) by a secondary ion mass spectrometry (SIMS), it is 0.001≦(Li/Zn)≦500.

A chip shaped electronic device comprising:

• an element body including zinc oxide material layers and internal electrode layers and having a size of 0.6 mm or less×0.3 mm or less×a thickness of 0.3 mm or less;
• and
• a pair of terminal electrodes formed on an outer surface of the element body, wherein a distance between facing end portions on the same plane is 50 μm or more;
• wherein when assuming a minimum distance from an outermost side of said internal electrode layer in the stacking direction to a surface of said element body is 1 and measuring an ion intensity ratio of Na and Zn, (Na/Zn), in a range from the surface of said element body to a depth of (0.9×1) by a secondary ion mass spectrometry, it is 0.001<(Na/Zn)<100.

A chip shaped electronic device comprising:

• an element body including zinc oxide material layers and internal electrode layers and having a size of 0.6 mm or less×0.3 mm or less×a thickness of 0.3 mm or less;
• and
• a pair of terminal electrodes formed on an outer surface of the element body, wherein a distance between facing end portions on the same plane is 50 μm or more;
• wherein when assuming a minimum distance from an outermost side of said internal electrode layer in the stacking direction to a surface of said element body is 1 and measuring an ion intensity ratio of K and Zn, (K/Zn), in a range from the surface of said element body to a depth of (0.9×1) by a secondary ion mass spectrometry, it is 0.001≦(K/Zn)≦100.

A chip shaped electronic device comprising:

• an element body including zinc oxide material layers and internal electrode layers and having a size of 0.6 mm or less×0.3 mm or less×a thickness of 0.3 mm or less;
• and
• a pair of terminal electrodes formed on an outer surface of the element body, wherein a distance between facing end portions on the same plane is 50 μm or more;
• wherein when assuming a minimum distance from an outermost side of said internal electrode layer in the stacking direction to a surface of said element body is 1 and measuring an ion intensity ratio of Rb and Zn, (Rb/Zn), in a range from the surface of said element body to a depth of (0.9×1) by a secondary ion mass spectrometry, it is 0.001<(Rb/Zn)<100.

A chip shaped electronic device comprising:

• an element body including zinc oxide material layers and internal electrode layers and having a size of 0.6 mm or less×0.3 mm or less×a thickness of 0.3 mm or less;
• and
• a pair of terminal electrodes formed on an outer surface of the element body, wherein a distance between facing end portions on the same plane is 50 μm or more;
• wherein when assuming a minimum distance from an outermost side of said internal electrode layer in the stacking direction to a surface of said element body is 1 and measuring an ion intensity ratio of Cs and Zn, (Cs/Zn), in a range from the surface of said element body to a depth of (0.9×1) by a secondary ion mass spectrometry, it is 0.001≦(Cs/Zn)≦100.

A chip shaped electronic device comprising:

• an element body including zinc oxide material layers and internal electrode layers and having a size of 0.6 mm or less×0.3 mm or less×a thickness of 0.3 mm or less;
• and
• a pair of terminal electrodes formed on an outer surface of the element body, wherein a distance between facing end portions on the same plane is 50 μm or more;
• wherein when assuming a minimum distance from an outermost side of said internal electrode layer in the stacking direction to a surface of said element body is 1 and measuring an ion intensity ratio of an alkali metal (A) and zinc (Zn), (A/Zn), in a range from the surface of said element body to a depth of (0.9×1) by a secondary ion mass spectrometry, it is 0.001≦(A/Zn)≦500.

A method of producing a chip shaped electronic device comprising an element body including zinc oxide material layers and internal electrode layers, and a pair of terminal electrodes formed on an outer surface of the element body, including the steps of:

• forming said element body;
• diffusing an alkali metal (A) from a surface of said element body to inside the element body;
• and
• after that, forming on the outer surface of said element body said pair of terminal electrodes connected to said internal electrode layers;
• wherein:
• the alkali metal is diffused under a condition of attaining 0.001≦(A/Zn)≦500 when assuming a minimum distance from an outermost layer side of said internal electrode layers in the stacking direction to the surface of said element body is 1 at the time of diffusing said alkali metal and measuring an ion intensity ratio of the alkali metal (A) and zinc (Zn), (A/Zn), in a range from the surface of said element body to a depth of (0.9×1) by a secondary ion mass spectrometry.

A method of producing a chip shaped electronic device comprising an element body including zinc oxide material layers and internal electrode layers, and a pair of terminal electrodes formed on an outer surface of the element body, including the steps of:

• forming said element body;
• forming on the outer surface of said element body terminal electrodes connected to said internal electrode layers;
• and
• after that, diffusing an alkali metal (A) from a surface of said element body to inside the element body;
• wherein:
• the alkali metal is diffused under a condition of attaining 0.001≦(A/Zn)≦500 when assuming a minimum distance from an outermost layer side of said internal electrode layers in the stacking direction to the surface of said element body is 1 at the time of diffusing said alkali metal and measuring an ion intensity ratio of the alkali metal (A) and zinc (Zn), (A/Zn), in a range from the surface of said element body to a depth of (0.9×1) by a secondary ion mass spectrometry.

A method of producing a chip shaped electronic device comprising an element body including zinc oxide material layers and internal electrode layers, including the steps of:

• forming said element body;
• diffusing an alkali metal (A) from a surface of said element body to inside the element body;
• and
• after that, forming on the outer surface of said element body terminal electrodes connected to said internal electrode layers;
• and
• wherein:
• the alkali metal is diffused under a condition of attaining 0.001≦(A/Zn)≦500 when measuring an ion intensity ratio of the alkali metal (A) and zinc (Zn), (A/Zn), in a range from the surface of said element body to a depth of 100 μm by a secondary ion mass spectrometry.

A method of producing a chip shaped electronic device comprising an element body including zinc oxide material layers and internal electrode layers, including the steps of:

• forming said element body;
• forming on the outer surface of said element body terminal electrodes connected to said internal electrode layers;
• and
• after that, diffusing an alkali metal (A) from a surface of said element body to inside the element body;
• wherein:
• the alkali metal is diffused under a condition of attaining 0.001≦(A/Zn)≦500 when measuring an ion intensity ratio of the alkali metal (A) and zinc (Zn), (A/Zn), in a range from the surface of said element body to a depth of 100 μm by a secondary ion mass spectrometry.

A method of producing a chip shaped electronic device comprising:

• an element body including zinc oxide material layers and internal electrode layers and having a size of 0.6 mm or less×0.3 mm or less×a thickness of 0.3 mm or less;
• and
• a pair of terminal electrodes formed on an outer surface of the element body, wherein a distance between facing end portions on the same plane is 50 μm or more;
• including the steps of:
• forming said element body;
• diffusing an alkali metal (A) from a surface of said element body to inside the element body;
• and
• after that, forming on the outer surface of said element body said pair of terminal electrodes connected to said internal electrode layers;
• wherein:
• the alkali metal is diffused under a condition of attaining 0.001≦(A/Zn)≦500 when assuming a minimum distance from an outermost layer side of said internal electrode layers in the stacking direction to the surface of said element body is 1 at the time of diffusing said alkali metal and measuring an ion intensity ratio of the alkali metal (A) and zinc (Zn), (A/Zn), in a range from the surface of said element body to a depth of (0.9×1) by a secondary ion mass spectrometry.

A method of producing a chip shaped electronic device comprising:

• an element body including zinc oxide material layers and internal electrode layers and having a size of 0.6 mm or less×0.3 mm or less×a thickness of 0.3 mm or less;
• and
• a pair of terminal electrodes formed on an outer surface of the element body, wherein a distance between facing end portions on the same plane is 50 μm or more;
• including the steps of:
• forming said element body;
• forming on the outer surface of said element body said pair of terminal electrodes connected to said internal electrode layers;
• and
• after that, diffusing an alkali metal (A) from a surface of said element body to inside the element body;
• wherein:
• the alkali metal is diffused under a condition of attaining 0.001≦(A/Zn)≦500 when assuming a minimum distance from an outermost layer side of said internal electrode layers in the stacking direction to the surface of said element body is 1 at the time of diffusing said alkali metal and measuring an ion intensity ratio of the alkali metal (A) and zinc (Zn), (A/Zn), in a range from the surface of said element body to a depth of (0.9×1) by a secondary ion mass spectrometry.