Ultra thin TCS (SiCl4) cell nitride for DRAM capacitor with DCS (SiH2CI2) interface seeding layer

A method of forming a silicon nitride-comprising layer, comprising the steps of:

• forming a first silicon nitride layer over a surface of the substrate by chemical vapor deposition of dichlorosilane to a thickness of up to about 5 angstroms, the first layer having an exposed surface;
• and
• forming a second silicon nitride layer over the exposed surface of the first layer by chemical vapor deposition of silicon tetrachloride to a thickness of about 40 to about 50 angstroms;
• the first and second layers together forming the silicon nitride-comprising layer.

A method of forming a silicon nitride layer on a silicon-comprising substrate, comprising the steps of:

• nitridizing the surface of the substrate by exposing the substrate to a nitrogen-comprising gas to form a first layer of silicon nitride on the surface of the substrate, the first layer having an exposed surface;
• exposing the exposed surface of the first layer to a gas mixture of dichlorosilane and a nitrogen-comprising gas to deposit a second layer of silicon nitride on the exposed surface of the first layer, the second layer having an exposed surface;
• and
• exposing the exposed surface of the second layer to a gas mixture of silicon tetrachloride and a nitrogen-comprising gas to deposit a third layer of silicon nitride of a desired thickness on the exposed surface of the second layer.

A method of forming a silicon nitride layer on a silicon-comprising substrate, comprising the steps of:

• nitridizing a surface of the substrate by exposing the surface to a nitrogen-comprising gas to form a first layer of silicon nitride on the surface of the substrate;
• the first silicon nitride layer having an exposed surface and a thickness of up to about 5 angstroms;
• exposing the exposed surface of the first layer to a gas mixture of dichlorosilane and a nitrogen-comprising gas to deposit a second layer of silicon nitride on the exposed surface of the first layer, the second silicon nitride layer having an exposed surface and a thickness of up to about 5 angstroms;
• and
• exposing the exposed surface of the second layer to a gas mixture of silicon tetrachloride and a nitrogen-comprising gas to deposit a third layer of silicon nitride on the exposed surface of the second layer, the third silicon nitride layer having a thickness of up to at about 50 angstroms.

A method of forming a silicon nitride layer on a silicon-comprising substrate comprising at least two discrete areas of silicon-comprising materials having a different surface nucleation rate for silicon tetrachloride in a chemical vapor deposition to form a silicon nitride layer thereon, the method comprising the steps of:

• nitridizing a surface of the substrate by exposing the surface to a nitrogen-comprising gas to form a first layer of silicon nitride on the surface of the substrate, the first silicon nitride layer having an exposed surface;
• exposing the exposed surface of the first layer to a gas mixture of dichlorosilane and a nitrogen-comprising gas to deposit a second layer of silicon nitride on the exposed surface of the first layer, the second silicon nitride layer having an exposed surface;
• and
• exposing the exposed surface of the second layer to a gas mixture of silicon tetrachloride and a nitrogen-comprising gas to deposit a third layer of silicon nitride of a desired thickness on the surface of the exposed surface of the second layer, whereby the thickness of the third silicon nitride layer is substantially equivalent over each of the areas of the silicon-comprising substrate.

A method of forming a silicon nitride-comprising layer on a silicon-comprising substrate, comprising the steps of:

• nitridizing a surface of the silicon-comprising substrate to form a first silicon nitride layer having an exposed surface and a thickness of less than about 5 angstroms;
• forming a second silicon nitride layer over the exposed surface of the first layer by chemical vapor deposition of dichlorosilane to a thickness of up to about 5 angstroms, the second silicon nitride layer having an exposed surface;
• and
• forming a third silicon nitride layer over the exposed surface of the second layer by chemical vapor deposition of silicon tetrachloride to a thickness of about 40 to about 50 angstroms;
• the first, second and third layers together forming the silicon nitride-comprising layer.

A silicon nitride deposition method, comprising the steps of:

• providing a silicon-comprising substrate;
• nitridizing a surface of the silicon substrate to form a layer of silicon nitride having a thickness of up to about 5 angstroms, the nitridized layer having an exposed surface;
• forming a silicon nitride-comprising layer on the exposed surface of the nitridized layer by a first chemical vapor deposition of dichlorosilane to form a first silicon nitride layer on the exposed surface of the nitridized layer, the first silicon nitride layer having an exposed surface and a thickness of 5 angstroms or less;
• and a second chemical vapor deposition of silicon tetrachloride to form a second silicon nitride layer on the exposed surface of the first layer, the second layer having a thickness of up to about 50 angstroms;
• the first and second layers forming the silicon nitride-comprising layer.

A method of semiconductive wafer processing, comprising forming a silicon nitride-comprising layer over a surface of a semiconductive wafer, the forming comprising the steps of:

• forming a first portion of the silicon nitride-comprising layer of less than about 5 angstroms by nitridizing the surface of the semiconductive wafer, the first layer portion having an exposed surface;
• depositing a second portion of the silicon nitride-comprising layer of less than about 5 angstroms on the exposed surface of the first layer portion, utilizing a mixture of dichlorosilane and a nitrogen-comprising gas, the second layer portion having an exposed surface;
• and
• depositing a third portion of the silicon nitride-comprising layer of up to about 50 angstroms on the exposed surface of the second layer portion utilizing a mixture of silicon tetrachloride and a nitrogen-comprising gas.

A method of forming a capacitor, comprising the steps of:

• forming a silicon nitride-comprising layer over a surface of a first capacitor plate by depositing a first layer of the silicon nitride-comprising layer of less than about 5 angstroms on the surface of the capacitor plate, utilizing a mixture of dichlorosilane and a nitrogen-comprising gas, the first layer having an exposed surface;
• and depositing a second layer of the silicon nitride-comprising layer of up to about 50 angstroms on the exposed surface of the first layer, utilizing a mixture of silicon tetrachloride and a nitrogen-comprising gas, the second layer having an exposed surface;
• and
• forming a second capacitor plate over exposed surface of the second silicon nitride layer.

A method of forming a capacitor, comprising the steps of:

• forming a first capacitor plate layer comprising a conductively doped polysilicon;
• forming a silicon nitride-comprising layer over a surface of the first capacitor plate by depositing a first silicon nitride layer by low pressure chemical vapor deposition of dichlorosilane and one or more nitrogen-comprising gases to a thickness of less than about 5 angstroms on the surface of the capacitor plate, the first layer having an exposed surface;
• and depositing a second silicon nitride layer by low pressure chemical vapor deposition of silicon tetrachloride and one or more nitrogen-comprising gases to a desired thickness on the exposed surface of the first layer, the second layer having an exposed surface;
• and
• forming a second capacitor plate layer over the exposed surface of second silicon nitride layer.

A method of forming a capacitor, comprising the steps of:

• forming a first capacitor plate having a surface;
• forming a silicon nitride-comprising layer proximate the first capacitor plate by chemical vapor depositing dichlorosilane over the surface of the first capacitor plate to form a first silicon nitride layer of less than about 5 angstroms, the first layer having an exposed surface;
• and chemical vapor depositing silicon tetrachloride over the exposed surface of the first layer to form a second silicon nitride layer having an exposed surface and a desired thickness;
• and
• forming a second capacitor plate layer over the exposed surface of the second layer and proximate the silicon nitride-comprising layer.

A method of forming a capacitor, comprising the steps of:

• forming a first capacitor plate having an exposed surface comprising at least two discrete areas of silicon-comprising materials having a different surface nucleation rate for silicon tetrachloride in a chemical vapor deposition to form a silicon nitride layer thereon;
• forming a silicon nitride-comprising layer proximate the first capacitor plate by chemical vapor depositing dichlorosilane over the exposed surface of the first capacitor plate to form a first silicon nitride layer of less than about 5 angstroms, the first layer having an exposed surface;
• and chemical vapor depositing silicon tetrachloride onto the exposed surface of the first layer to form a second silicon nitride layer of a desired thickness, the second layer having an exposed surface;
• whereby the silicon nitride-comprising layer comprises the first and second layers and has a thickness that is substantially equivalent cross-wise over the surface of the first capacitor plate;
• and
• forming a second capacitor plate layer over the exposed surface of the second layer, proximate the silicon nitride-comprising layer.

A method of forming a capacitor, comprising the steps of:

• forming a silicon nitride-comprising layer over a surface of a first capacitor plate by nitridizing the surface of the capacitor to form a first silicon nitride layer of less than about 5 angstroms, the first layer having an exposed surface;
• depositing a second layer of the silicon nitride-comprising layer of less than about 5 angstroms onto the exposed surface of the layer utilizing a mixture of dichlorosilane and a nitrogen-comprising gas, the second layer having an exposed surface;
• and depositing a third layer of the silicon nitride-comprising layer of up to about 50 angstroms onto the exposed surface of the second layer utilizing a mixture of silicon tetrachloride and a nitrogen-comprising gas, the third layer having an exposed surface;
• and
• forming a second capacitor plate over the exposed surface of the third silicon nitride layer.

A method of forming a capacitor, comprising the steps of:

• forming a first capacitor plate layer comprising a conductively doped polysilicon;
• forming a silicon nitride-comprising layer over a surface of the first capacitor plate by nitridizing the surface of the first capacitor plate to form a first silicon nitride layer of less than about 5 angstroms, the first layer having an exposed surface;
• depositing a second silicon nitride layer onto the exposed surface of the first layer by low pressure chemical vapor deposition of dichlorosilane and one or more nitrogen-comprising gases to a thickness of less than about 5 angstroms, the second layer having an exposed surface;
• and depositing a third silicon nitride layer onto the exposed surface of the second layer by low pressure chemical vapor deposition of silicon tetrachloride and one or more nitrogen-comprising gases to a desired thickness, the third layer having an exposed surface;
• and
• forming a second capacitor plate layer over the exposed surface of the third silicon nitride layer.

A method of forming a capacitor, comprising the steps of:

• forming a first capacitor plate having a silicon-comprising surface;
• forming a silicon nitride-comprising layer proximate the first capacitor plate by nitridizing the surface of the first capacitor plate to form a first silicon nitride layer of less than about 5 angstroms, the first layer having an exposed surface;
• chemical vapor depositing dichlorosilane over the exposed surface of the first layer to form a second silicon nitride layer of less than about 5 angstroms, the second layer having an exposed surface;
• and chemical vapor depositing silicon tetrachloride over the exposed surface of the second layer to form a silicon nitride layer of a desired thickness;
• and
• forming a second capacitor plate layer proximate the silicon nitride-comprising layer.

A method of forming a capacitor, comprising the steps of:

• forming a first capacitor plate having an exposed surface comprising at least two discrete areas of silicon-comprising materials having a different surface nucleation rate for silicon tetrachloride in a chemical vapor deposition to form a silicon nitride layer thereon;
• forming a silicon nitride-comprising layer proximate the first capacitor plate by nitridizing the exposed surface of the first capacitor plate to form a first silicon nitride layer having a thickness of less than about 5 angstroms, the first layer having an exposed surface;
• chemical vapor depositing dichlorosilane over the exposed surface of the first layer to form a second silicon nitride layer having a thickness of less than about 5 angstroms, the second layer having an exposed surface;
• and chemical vapor depositing silicon tetrachloride over the exposed surface of the second layer to form a third silicon nitride layer of a desired thickness;
• whereby the combined thicknesses of the first, second and third layers provides the silicon nitride-comprising with a thickness that is substantially equivalent cross-wise over the surface of the first capacitor plate;
• and
• forming a second capacitor plate layer proximate the silicon nitride-comprising layer.

A capacitor, comprising:

• a first capacitor plate having an exposed silicon-comprising surface;
• a silicon nitride-comprising layer proximate the first capacitor plate comprising a first silicon nitride layer of chemical vapor deposited dichlorosilane of less than about 5 angstroms over the exposed surface of the first capacitor plate, the first layer having an exposed surface;
• and a second silicon nitride layer of chemical vapor deposited silicon tetrachloride over the exposed surface of the first layer and having a predetermined thickness;
• and
• a second capacitor plate layer proximate the silicon nitride-comprising layer.

A capacitor, comprising:

• a first capacitor plate having an exposed silicon-comprising surface comprising at least two discrete areas of silicon-comprising materials having a different surface nucleation rate for silicon tetrachloride in a chemical vapor deposition to form a silicon nitride layer thereon;
• a silicon nitride-comprising layer proximate the first capacitor plate comprising a first silicon nitride layer of chemical vapor deposited dichlorosilane over the exposed surface of the first capacitor plate, the first layer having a exposed surface and a thickness of less than about 5 angstroms;
• and a second silicon nitride layer of chemical vapor deposited silicon tetrachloride over the exposed surface of the first layer, the second layer having a predetermined thickness;
• whereby the thickness of the silicon tetrachloride nitride layer is substantially equivalent cross-wise over the surface of the first capacitor plate;
• and
• a second capacitor plate layer proximate the silicon nitride-comprising layer.

A capacitor, comprising:

• a first capacitor plate having an exposed silicon-comprising surface;
• a silicon nitride-comprising layer proximate the first capacitor plate comprising a nitridized first layer of silicon nitride on the exposed surface of the first capacitor plate, the first layer having an exposed surface and a thickness of less than about 5 angstroms;
• a second silicon nitride layer of chemical vapor deposited dichlorosilane over the exposed surface of the first layer, the second layer having an exposed surface and a thickness of less than about 5 angstroms;
• and a third silicon nitride layer of chemical vapor depositing silicon tetrachloride over the exposed surface of the second layer, the third surface having a predetermined thickness;
• and
• a second capacitor plate layer proximate the silicon nitride-comprising layer.

A capacitor, comprising:

• a first capacitor plate having an exposed silicon-comprising surface comprising at least two discrete areas of silicon-comprising materials having a different surface nucleation rate for silicon tetrachloride in a chemical vapor deposition to form a silicon nitride layer thereon;
• a silicon nitride-comprising layer proximate the first capacitor plate comprising a nitridized first layer of silicon nitride of less than about 5 angstroms on the exposed surface of the first capacitor plate, the first layer having an exposed surface;
• a second silicon nitride layer of chemical vapor deposited dichlorosilane over the exposed surface of the first layer, the second layer having an exposed surface and a thickness of less than about 5 angstroms;
• and a third silicon nitride layer of chemical vapor deposited silicon tetrachloride over the exposed surface of the second layer, the third surface having a predetermined thickness;
• whereby the thickness of the silicon tetrachloride nitride third layer is substantially equivalent crosswise over the surface of the first capacitor plate;
• and
• a second capacitor plate layer proximate the silicon nitride-comprising layer.