US 2004/0169247 A1 · Split type light receiving element and circuit-built-in light-receiving element and optical disk drive

Abstract

A plurality of N-type diffusion layers (105, 108) are formed a specified distance apart on a P-type semiconductor layer (102). A P-type leak prevention layer (109) formed between at least N-type diffusion layers (105, 108) prevents leaking between the diffusion layers (105, 108). A dielectric film (115) is formed in at least a light incident area on a P-type semiconductor layer (102) including the diffusion layers (105, 108) and the leak prevention layer (109). Accordingly, provided are a split type light receiving element positively functioning as a split type light receiving element even when charge is accumulated in the dielectric film and having a uniform sensitivity throughout the entire area on a light receiving surface, and a circuit-built-in light receiving element and an optical disk device using the split type light receiving element.

Claims11

Dependent claims

A segmented type light-receiving device comprising:

a plurality of second conductive type diffusion layers (105-108, 205, 206) formed spaced apart at prescribed intervals on a first conductive type semiconductor layer (102, 202);
a leakage prevention layer (109, 207) that is formed at least between the plurality of second conductive type diffusion layers (105-108, 205, 206) on the first conductive type semiconductor layer (102, 202) and prevents leakage between the plurality of second conductive type diffusion layers (105-108, 205, 206);
and
a dielectric film (115, 211, 212) that is formed at least in a region on which light is incident on the first conductive type semiconductor layer (102, 202) including the plurality of second conductive type diffusion layers (105-108, 205, 206) and the leakage prevention layer (109, 207).

1 more element

A segmented type light-receiving device comprising:

a plurality of second conductive type first diffusion layers (205, 206) formed spaced apart at prescribed intervals on a first conductive type semiconductor layer (202);
a first conductive type second diffusion layer (207) formed at least between the plurality of second conductive type first diffusion layers (205, 206) on the first conductive type semiconductor layer (202);
and
a dielectric film (211, 212) that is formed at least in a region on which light is incident on the first conductive type semiconductor layer (202) including the plurality of second conductive type first diffusion layers (205, 206) and the first conductive type second diffusion layer (207),
the plurality of second conductive type first diffusion layers (205, 206) and the first conductive type second diffusion layer (207) having a layer thickness equal to or greater than an absorption length of short-wavelength light.

2 more elements

Dependencies are inferred from the claim text.

Split type light receiving element and circuit-built-in light-receiving element and optical disk drive

Life of this patent

Split type light receiving element and circuit-built-in light-receiving element and optical disk drive

Life of this patent

Abstract

Claims11