Non-volatile semiconductor memory devices with a gate electrode having a higher work-function than a polysilicon layer

A floating trap non-volatile memory device comprising:

• a semiconductor substrate;
• a plurality of parallel active regions on the semiconductor substrate;
• a plurality of parallel memory gate electrodes that intersect and pass over the active regions;
• a tunneling insulating layer having a first dielectric constant;
• a blocking insulating layer having a second dielectric constant that is greater than the first dielectric constant of the tunneling insulating layer;
• and
• a charge storage layer, wherein the tunneling insulating layer, the charge storage layer, and the blocking insulating layer are between the intersections of the active regions and the memory gate electrodes, and wherein at least portions of the memory gate electrodes adjacent to the blocking insulating layers have a higher work-function than polysilicon.