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US 2004/0169236 A1Published application
Process to improve Nwell-Nwell isolation with a blanket low dose high energy implant
AssigneeTexas Instruments Incorporated
InventorsSeetharaman Sridhar, Stanton P. Ashburn, Zhiqiang Wu, Keith A. Joyner
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Abstract
Transistor isolation is improved by eliminating the channeling tail of an N well implant. To do this, a low dose, high energy implant of an oppositely charged dopant ion is implanted, targeted at the depth of the channeling tail.
Claims3
An integrated circuit structure, comprising:
- NMOS and PMOS transistors, at least some of said PMOS transistors being formed in N-well diffusions in a semiconductor material;
- and
- a blanket P-type diffusion component having a peak concentration depth more than twice that of said p-well.
An integrated circuit structure, comprising:
- a first population of a first dopant in a semiconductor, said first population occupying a first region of said semiconductor;
- a second population of said first dopant occupying a second region of said semiconductor, said second region being at a deeper implant depth than said first region;
- a second dopant occupying said second region of said semiconductor;
- wherein said second dopant is of opposite electrical ionization than said first dopant.
1 more element
A fabrication method, comprising the steps of:
- a) implanting first dopant atoms into a semiconductor body to create a first-conductivity-type well diffusion therein;
- and
- b) implanting second dopant atoms into said semiconductor body, with more than twice the stopping distance and less than one-quarter of the dosage per unit area as said step a), to compensate atoms which channeled during said step a).
Dependencies are inferred from the claim text.