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US 2004/0169235 A1Published application
Semiconductor device including a plurality of kinds of MOS transistors and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorHisato Oyamatsu
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Abstract
A semiconductor device, comprises a first MOS transistor including a gate electrode having a gate width Le and a first gate post oxide film formed on the circumferential side wall of the gate electrode, and a second MOS transistor including a gate electrode having a gate width Li smaller than the gate width Le of the gate electrode of the first MOS transistor and a second gate post oxide film formed on a circumferential side wall of the gate electrode and having a portion differing in thickness from the first gate post oxide film.
Claims16
A semiconductor device, comprising:
- a first MOS transistor including a first gate electrode having a first gate width and a first gate post oxide film formed on a circumferential side wall of said first gate electrode;
- and
- a second MOS transistor including a second gate electrode having a second gate width smaller than said first gate width and a second gate post oxide film formed on a circumferential side wall of said second gate electrode and having a portion differing in thickness from said first gate post oxide film.
A semiconductor device, comprising:
- a plurality of first MOS transistors having first gate electrodes, each of said first gate electrodes having a first gate width, said first gate electrodes being arranged at a first pitch, and said plurality of first MOS transistors having first gate post oxide films formed on a circumferential side walls of said first gate electrodes;
- and
- a plurality of second MOS transistors having second gate electrodes, each of said second gate electrodes having a second width smaller than said first gate width, said second gate electrodes being arranged at a second pitch larger than said first pitch, and said plurality of second MOS transistors having second gate post oxide films formed on a circumferential side wall of said second gate electrodes, at least a part of said second gate post oxide film differing in thickness from said first gate post oxide film.
A semiconductor device, comprising:
- a first MOS transistor to which is applied a first voltage, said first MOS transistor having a first gate electrode having a gate width and a first gate post oxide film formed on a circumferential side wall of said first gate electrode;
- and
- a second MOS transistor to which is applied a second voltage lower than said first voltage, said second MOS transistor having a second gate electrode having a gate width smaller than said first gate width and a second gate post oxide film formed on a circumferential side wall of said second gate electrode, at least a part of said second gate post oxide film having a thickness differing from the thickness of said first gate post oxide film.
A semiconductor device, comprising:
- a first MOS transistor including a first gate insulating film having a first thickness, a first gate electrode formed on said first gate insulating film and having a first gate width, and a first gate post oxide film formed on a circumferential side wall of said first gate electrode;
- and
- a second MOS transistor including a second gate insulating film having a second thickness smaller than said first thickness, a second gate electrode formed on said second gate insulating film and having a second gate width smaller than said first gate width, and a second gate post oxide film formed on a circumferential side wall of said first gate electrode, at least a part of said second gate post oxide film differing in thickness from said first gate post oxide film.
A method of manufacturing a semiconductor device, comprising:
- forming a gate insulating film in each of a region in which a first MOS transistor is to be formed and another region in which a second MOS transistor is to be formed on a semiconductor substrate;
- forming a film of a gate electrode material on the entire surface;
- forming a film of a resist material on the entire surface;
- patterning said film of said resist material in a manner to have a pattern of a size larger than a gate width of said gate electrode of at least said first MOS transistor in a region where said first MOS transistor is to be formed and to have a pattern conforming with a gate electrode of said second MOS transistor in a region in which said second MOS transistor is to be formed so as to form a first mask;
- selectively etching said film of said gate electrode material by an etching method using said first mask so as to form said gate electrode of said second MOS transistor;
- after removing said first mask, applying an oxidizing treatment so as to form a first gate post oxide film on a circumferential side wall of said gate electrode of at least said second MOS transistor;
- after forming a film of a resist material on the entire surface, patterning said film of said resist material in a manner to have a pattern conforming with said gate electrode of said first MOS transistor in a region where said first MOS transistor is to be formed and a pattern covering the entire surface in a region in which said second MOS transistor is to be formed so as to form a second mask;
- selectively etching said film of said gate electrode material by an etching method using said second mask so as to form said gate electrode of said first MOS transistor;
- and
- applying an oxidizing treatment so as to form a second gate post oxide film differing in thickness from said first gate post oxide film on a circumferential side wall of said gate electrode of said first MOS transistor in a region other than a region in which said first gate post oxide film is formed.
7 more elements
Dependencies are inferred from the claim text.