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US 2004/0169225 A1Published application
Isotopically pure silicon-on-insulator wafers and method of making same
AssigneeIsonics Corporation
InventorStephen J. Burden
Life of this patent
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Abstract
A semiconductor wafer structure having a device layer, an insulating layer, and a substrate which is capable of supporting increased semiconductor device densities or increased semiconductor device power. One or more of the layers includes an isotopically enriched semiconductor material having a higher thermal conductivity than semiconductor material having naturally occurring isotopic ratios. The wafer structure may be formed by various techniques, such as wafer bonding, and deposition techniques.
Claims19
A multi-layer semiconductor wafer structure comprising:
- a substrate;
- an insulating layer on said substrate;
- and
- a top device layer of semiconducting material on said insulating layer,
- wherein at least one of the component layers is comprised of isotopically enriched elements of silicon, germanium, or silicon-germanium alloys, and wherein the structure is formed by bonding two wafers together.
2 more elements
A multi-layer semiconductor wafer structure comprising:
- a single crystal silicon substrate;
- a first silicon layer;
- a second electrically insulating layer;
- and
- a top device layer,
- wherein at least one of the first, second, and top layers comprises isotopically enriched elements of silicon, germanium, or silicon-germanium alloys.
3 more elements
Dependencies are inferred from the claim text.