Loading patent…

Back to results

US 2004/0169220 A1Published application

Semiconductor device and manufacturing method thereof

AssigneeShindengen Electric Manufacturing Co., Ltd.

InventorsToshiyuki Takemori, Masato Itoi, Yuji Watanabe

Life of this patent

Estimating the term…

Download PDF Find prior artPrior art Similar

Abstract Drawings Claims Description

Abstract

A semiconductor device capable of preventing a buried diffusion region formed near the bottom surface of a source trench from diffusing to the extent that it contacts a gate trench in the vicinity of that buried diffusion region even when the accuracy of the photographic step of trench formation is not so high. A side wall is formed on the circumferential side of the source trench (21) and then impurities are injected to the bottom surface of the source trench (21). When the impurities are heated and diffused, the buried P+-type diffusion region (14) is formed with a width almost identical to the width of the opening of the source trench (21) or smaller than the width (B) of the opening of the source trench (21). Thus, even when irregularities are generated in the manufacturing step and the buried diffusion region (14) becomes larger than is necessary, it is possible to prevent contact of the buried diffusion region (14) with the gate trench (20).

Claims16

Dependent claims

Claim 1A semiconductor device · 197 words3 dependent Claim 5A manufacturing method of a semiconductor device · 369 wordsNo dependents Claim 6A manufacturing method of a semiconductor device · 382 wordsNo dependents Claim 7A manufacturing method of a semiconductor device · 382 wordsNo dependents Claim 8A manufacturing method of a semiconductor device · 438 wordsNo dependents Claim 9A manufacturing method of a semiconductor device · 448 wordsNo dependents Claim 10A manufacturing method of a semiconductor device · 463 wordsNo dependents Claim 11A manufacturing method of a semiconductor device · 413 wordsNo dependents Claim 12A manufacturing method of a semiconductor device · 427 wordsNo dependents Claim 13A manufacturing method of a semiconductor device · 409 wordsNo dependents Claim 14A manufacturing method of a semiconductor device · 536 wordsNo dependents Claim 15A manufacturing method of a semiconductor device · 552 wordsNo dependents Claim 16A manufacturing method of a semiconductor device · 546 wordsNo dependents

A semiconductor device comprising:

a first conductive layer of a first conductive type,
a first conductive type of drain layer formed so as to be laminated on a surface of the first conductive layer,
a second conductive type of second conductive layer of an opposite type from the first conductive type formed so as to be laminated on a surface of the drain layer,
a first conductive type of source region formed over a range extending from a surface of the second conductive layer to a predetermined depth,
a first trench formed so as to reach the drain layer by opening the source region,
a second trench formed by opening the source region,
a gate insulating film formed on a surface of the first trench,
a gate electrode film formed on an inner surface of the gate insulating film,
a source electrode film formed at least on a surface of the second trench, and
a second conductive type of buried diffusion region formed within the second conductive layer, exposed on a bottom surface of the second trench, and to a width that is equal to or narrower than a width of the opening of the second trench.

7 more elements

A manufacturing method of a semiconductor device comprising:

forming a first insulating film on a surface of a first conductive type of drain layer formed so as to be laminated on a surface of a first conductive type of first conductive layer,
opening a predetermined site in the first insulating film to expose the drain layer,
opening the drain layer to form a first trench,
removing the first insulating film,
forming a second insulating film on the surface of the drain layer and on a surface of the first trench,
forming a gate electrode film on an inner surface of the second insulating film formed within the first trench,
removing a section of the second insulating film formed on the surface of the drain layer and a portion of a section of the second insulating film formed on the surface of the first trench,
forming a third insulating film on the surface of the drain layer, on the surface of the first trench, and on a surface of exposed sections of the second insulating film and the gate electrode film,
forming a second conductive type of a second conductive layer of an opposite type from the first conductive type over a range extending from the surface of the drain layer to a predetermined depth,
forming a first conductive type of source region over a range extending from a surface of the second conductive layer to a predetermined depth,
forming a fourth insulating film on a surface of the third insulating film,
opening predetermined sites in the third insulating film and the fourth insulating film to expose the source region,
opening the exposed source region to form a second trench so as to reach to the second conductive layer,
forming a fifth insulating film on a surface of the fourth insulating film and on a surface of the second trench,
injecting impurities into a section of the second conductive layer beneath a bottom surface of the second trench,
forming a second conductive type of buried diffusion region by heating and diffusing the impurities,
removing the fifth insulating film, and
forming a source electrode film on the surface of the fourth insulating film and on the surface of the second trench.

15 more elements

A manufacturing method of a semiconductor device comprising:

forming a second conductive layer of a second conductive type that is an opposite type from a first conductive type over a range extending from a surface of a first conductive type of a drain layer, formed so as to be laminated onto a surface of a first conductive type of a first conductive layer, to a predetermined depth,
forming a first conductive type of a source region over a range extending from a surface of the second conductive layer to a predetermined depth,
forming a first insulating film on a surface of the source region,
opening a predetermined site in the first insulating film to expose the source region,
opening the exposed source region to form a first trench so as to reach to the drain layer,
removing the first insulating film,
forming a second insulating film on the surface of the source region and on a surface of the first trench,
forming a gate electrode film on an inner surface of the second insulating film formed within the first trench,
removing a section of the second insulating film formed on the surface of the source region and removing a portion of a section of the second insulating film formed on the surface of the first trench,
forming a third insulating film on the surface of the source region, on the surface of the first trench and on a surface of exposed sections of the second insulating film and the gate electrode film,
forming a fourth insulating film on a surface of the third insulating film,
opening predetermined sites in the third insulating film and the fourth insulating film to expose the source region,
opening the exposed source region to form a second trench so as to reach to the second conductive layer,
forming a fifth insulating film on a surface of the fourth insulating film and on a surface of the second trench,
injecting impurities into a section of the second conductive layer below a bottom surface of the second trench,
forming a second conductive type of buried diffusion region by heating and diffusing the impurities,
removing the fifth insulating film, and
forming a source electrode film on the surface of the fourth insulating film and the surface of the second trench.

15 more elements

A manufacturing method of a semiconductor device comprising:

forming a second conductive layer of a second conductive type that is an opposite type from a first conductive type over a range extending from a surface of a first conductive type of drain layer, formed so as to be laminated onto a surface of a first conductive type of a first conductive layer, to a predetermined depth,
forming a first insulating film on a surface of the second conductive layer,
opening a predetermined site in the first insulating film to expose the second conductive layer,
opening the exposed second conductive layer to form a first trench so as to reach to the drain layer,
removing the first insulating film,
forming a second insulating film on the surface of the second conductive layer and on a surface of the first trench,
forming a gate electrode film on an inner surface of the second insulating film formed within the first trench,
removing a section of the second insulating film formed on the surface of the second conductive layer and a portion of a section of the second insulating film formed on the surface of the first trench,
forming a third insulating film on the surface of the second conductive layer, on the surface of the first trench, and on a surface of exposed sections of the second insulating film and the gate electrode film,
forming a first conductive type of a source region over a range extending from the surface of the second conductive layer to a predetermined depth,
forming a fourth insulating film on a surface of the third insulating film,
opening predetermined sites in the third insulating film and the fourth insulating film to expose the source region,
opening the exposed source region to form a second trench in the source region,
forming a fifth insulating film on a surface of the fourth insulating film and on a surface of the second trench,
injecting impurities into a section of the second conductive layer below a bottom surface of the second trench,
forming a second conductive type of buried diffusion region by heating and diffusing the impurities,
removing the fifth insulating film, and
forming a source electrode film on the surface of the fourth insulating film and on the surface of the second trench.

15 more elements

A manufacturing method of a semiconductor device comprising:

forming a first insulating film on a surface of a first conductive type of a drain layer formed so as to be laminated onto a surface of a first conductive type of a first conductive layer,
opening a predetermined site in the first insulating film to expose the drain layer,
opening the exposed second conductive layer to form a first trench,
removing the first insulating film,
forming a second insulating film on a surface of the second conductive layer and on a surface of the first trench,
forming a gate electrode film on an inner surface of the second insulating film formed within the first trench,
removing a section of the second insulating film formed on a surface of the drain layer and a portion of a section of the second insulating film formed on the surface of the first trench,
forming a third insulating film on the surface of the drain layer, on the surface of the first trench and on a surface of exposed sections of the second insulating film and the gate electrode film,
forming a second conductive layer of a second conductive type opposite from the first conductive type over a range extending from the surface of the drain layer to a predetermined depth,
forming a first conductive type of source region over a range extending from a surface of the second conductive layer to a predetermined depth,
forming a fourth insulating film on a surface of the third insulating film,
opening predetermined sites in the third insulating film and the fourth insulating film to expose the source region,
opening the exposed source region to form a second trench so as to reach to the second conductive layer,
forming a fifth insulating film on a surface of the fourth insulating film and on a surface of the second trench,
forming a sixth insulating film on a surface of the fifth insulating film,
removing a section of the sixth insulating film formed on the surface of the fifth insulating film and a section of the sixth insulating film formed on a surface in the center and its vicinity of a bottom surface of the second trench,
injecting impurities into a section of the second conductive layer below the fifth insulating film exposed on the bottom surface of the second trench,
forming a second conductive type of buried diffusion region by heating and diffusing the impurities,
removing the fifth insulating film and the sixth insulating film, and
forming a source electrode film on the surface of the fourth insulating film and on the surface of the second trench.

17 more elements

A manufacturing method of a semiconductor device comprising:

forming a second conductive layer of a second conductive type that is an opposite type from a first conductive type over a range extending from a surface of a first conductive type of a drain layer, formed so as to be laminated onto a surface of a first conductive type of a first conductive layer, to a predetermined depth,
forming a first conductive type of source region over a range extending from a surface of the second conductive layer to a predetermined depth,
forming a first insulating film on a surface of the source region,
opening a predetermined site in the first insulating film to expose the source region,
opening the exposed source region to form a first trench so as to reach to the drain layer,
removing the first insulating film,
forming a second insulating film on the surface of the source region and on a surface of the first trench,
forming a gate electrode film on an inner surface of the second insulating film formed within the first trench,
removing a section of the second insulating film formed on the surface of the source region and a portion of a section of the second insulating film formed on the surface of the first trench,
forming a third insulating film on the surface of the source region, on the surface of the first trench and on a surface of exposed sections of the second insulating film and the gate electrode film,
forming a fourth insulating film on a surface of the third insulating film,
opening predetermined sites in the third insulating film and the fourth insulating film to expose the source region,
opening the exposed source region to form a second trench so as to reach to the second conductive layer,
forming a fifth insulating film on a surface of the fourth insulating film and on a surface of the second trench,
forming a sixth insulating film on a surface of the fifth insulating film,
removing a section of the sixth insulating film formed on the surface of the fourth insulating film and a section of the sixth insulating film formed on a surface of the center and its vicinity of a bottom surface of the second trench,
injecting impurities into a section of the second conductive layer below the fourth insulating film exposed on the bottom surface of the second trench,
forming a second conductive type of buried diffusion region by heating and diffusing the impurities,
removing the fifth insulating film and the sixth insulating film, and
forming a source electrode film on the surface of the fourth insulating film and on the surface of the second trench.

17 more elements

A manufacturing method of a semiconductor device comprising:

forming a second conductive layer of a second conductive type that is an opposite type from a first conductive type over a range extending from a surface of a first conductive type of drain layer of a semiconductor substrate to a predetermined depth, said semiconductor substrate comprising said drain layer formed so as to be laminated onto a surface of a first conductive type of first conductive layer,
forming a first insulating film on a surface of the second conductive layer,
opening a predetermined site in the first insulating film to expose the second conductive layer,
opening the exposed second conductive layer to form a first trench so as to reach to the drain layer,
removing the first insulating film,
forming a second insulating film on the surface of the second conductive layer and on a surface of the first trench,
forming a gate electrode film on an inner surface of the second insulating film formed within the first trench,
removing a section of the second insulating film formed on the surface of the second conductive layer and a portion of a section of the second insulating film formed on the surface of the first trench,
forming a third insulating film on the surface of the second conductive layer, on the surface of the first trench and on a surface of exposed sections of the second insulating film and the gate electrode film,
forming a first conductive type of source region over a range extending from the surface of the second conductive layer to a predetermined depth,
forming a fourth insulating film on a surface of the third insulating film,
opening predetermined sites in the third insulating film and the fourth insulating film to expose the source region,
opening the exposed source region to form a second trench so as to reach to the second conductive layer,
forming a fifth insulating film on a surface of the fourth insulating film and on a surface of the second trench,
forming a sixth insulating film on a surface of the fifth insulating film,
removing a section of the sixth insulating film formed on the surface of the fourth insulating film and a section of the sixth insulating film formed on a surface of the center and its vicinity of a bottom surface of the second trench,
injecting impurities into a section of the second conductive layer below the fourth insulating film exposed on the bottom surface of the second trench,
forming a second conductive type of buried diffusion region by heating and diffusing the impurities,
removing the fifth insulating film and the sixth insulating film, and
forming a source electrode film on the surface of the fourth insulating film and on the surface of the second trench.

17 more elements

A manufacturing method of a semiconductor device comprising:

forming a first insulating film on a surface of a first conductive type of drain layer formed so as to be laminated onto a surface of a first conductive type of a first conductive layer,
opening a predetermined site in the first insulating film to expose the drain layer,
opening the drain layer to form a first trench,
removing the first insulating film,
forming a second insulating film on the surface of the drain layer and on a surface of the first trench,
forming a gate electrode film on an inner surface of the second insulating film formed within the first trench,
removing a section of the second insulating film formed on the drain layer and a portion of a section of the second insulating film formed on the surface of the first trench,
forming a third insulating film on the surface of the drain layer, on the surface of the first trench and on a surface of exposed sections of the second insulating film and the gate electrode film,
forming a second conductive layer of a second conductive type that is an opposite type from the first conductive type over a range extending from the surface of the drain layer to a predetermined depth,
forming a first conductive type of source region over a range extending from a surface of the second conductive layer to a predetermined depth,
forming a fourth insulating film on the third insulating film,
opening predetermined sites in the third insulating film and the fourth insulating film to expose the source region,
opening the exposed source region to form a second trench so as to reach to the second conductive layer,
forming a fifth insulating film on a surface of the fourth insulating film and on a surface of the second trench,
injecting impurities into a section of the second conductive layer below a bottom surface of the second trench,
forming a second conductive type of buried diffusion region by heating and diffusing the impurities,
removing the fifth insulating film,
removing sections of the third insulating film and the fourth insulating film other than sections formed within the first trench deeper than a predetermined depth from a surface of the source region, and
forming a source electrode film on the surface of the source region, on the surface of the first trench, and on a surface of the exposed sections of the third insulating film and the fourth insulating film.

16 more elements

A manufacturing method of a semiconductor device comprising:

forming a second conductive layer of a second conductive type that is an opposite type from a first conductive type over a range extending from a surface of a first conductive type of drain layer, formed so as to be laminated on a surface of a first conductive type of first conductive layer, to a predetermined depth,
forming a first conductive type of source region over a range extending from a surface of the second conductive layer to a predetermined depth,
forming a first insulating film on a surface of the source region,
opening a predetermined site in the first insulating film to expose the source region,
opening the exposed source region to form a first trench so as to reach to the drain layer,
removing the first insulating film,
forming a second insulating film on the surface of the source region and on a surface of the first trench,
forming a gate electrode film on an inner surface of the second insulating film formed within the first trench,
removing a section of the second insulating film formed on the surface of the source region and a portion of a section of the second insulating film formed on the surface of the first trench,
forming a third insulating film on the surface of the source region, on the surface of the first trench and on a surface of exposed sections of the second insulating film and the gate electrode film,
forming a fourth insulating film on a surface of the third insulating film,
opening predetermined sites in the third insulating film and the fourth insulating film to expose the source region,
opening the exposed source region to form a second trench so as to reach to the second conductive layer,
forming a fifth insulating film on a surface of the fourth insulating film and on a surface of the second trench,
injecting impurities into a section of the second conductive layer below a bottom surface of the second trench,
forming a second conductive type of buried diffusion region by heating and diffusing the impurities,
removing the fifth insulating film,
removing sections of the third insulating film and the fourth insulating film other than sections formed within the first trench deeper than a predetermined depth from the surface of the source region, and
forming a source electrode film on the surface of the source region, on the surface of the first trench and on a surface of the exposed sections of the third insulating film and the fourth insulating film.

16 more elements

A manufacturing method of a semiconductor device comprising:

forming a second conductive layer of a second conductive type that is an opposite type from a first conductive type over a range extending from a surface of a first conductive type of drain layer, formed so as to be laminated onto a surface of a first conductive type of first conductive layer, to a predetermined depth,
forming a first insulating film on a surface of the second conductive layer,
opening a predetermined site in the first insulating film to expose the second conductive layer,
opening the exposed second conductive layer to form a first trench so as to reach to the drain layer,
removing the first insulating film,
forming a second insulating film on the surface of the second conductive layer and on a surface of the first trench,
forming a gate electrode film on an inner surface of the second insulating film formed within the first trench,
removing a section of the second insulating film formed on the surface of the second conductive layer and a portion of a section of the second insulating film formed on the surface of the first trench,
forming a third insulating film on the surface of the second conductive layer, on the surface of the first trench, and on a surface of exposed sections of the second insulating film and the gate electrode film,
forming a first conductive type of source region over a range extending from the surface of the second conductive layer to a predetermined depth,
forming a fourth insulating film on a surface of the third insulating film,
opening predetermined sites in the third insulating film and the fourth insulating film to expose the source region,
opening the exposed source region to form a second trench in the source region,
forming a fifth insulating film on a surface of the fourth insulating film and on a surface of the second trench,
injecting impurities into a section of the second conductive layer below a bottom surface of the second trench,
forming a second conductive type of buried diffusion region by heating and diffusing the impurities,
removing the fifth insulating film,
removing sections of the third insulating film and the fourth insulating film other than sections formed within the first trench, and
forming a source electrode film on the third insulating film, the fourth insulating film and on a surface of the exposed source region and the surface of the second trench.

16 more elements

A manufacturing method of a semiconductor device comprising:

forming a first insulating film on a surface of a first conductive type of drain layer formed so as to be laminated onto a surface of a first conductive type of first conductive layer,
opening a predetermined site in the first insulating film to expose the drain layer,
opening the drain layer to form a first trench,
removing the first insulating film,
forming a second insulating film on the surface of the drain layer and on a surface of the first trench,
forming a gate electrode film on an inner surface of the second insulating film formed within the first trench,
removing a section of the second insulating film formed on the surface of the drain layer and a portion of a section of the second insulating film formed on the surface of the first trench,
forming a third insulating film on the surface of the drain layer, on the surface of the first trench and on a surface of exposed sections of the second insulating film and the gate electrode film,
forming a second conductive layer of a second conductive type that is an opposite type from the first conductive type over a range extending from the surface of the drain layer to a predetermined depth,
forming a first conductive type of source region over a range extending from a surface of the second conductive layer to a predetermined depth,
forming a fourth insulating film on a surface of the third insulating film,
removing sections of the third insulating film and the fourth insulating film other than sections formed within the first trench deeper than a predetermined depth from a surface of the source region,
forming a fifth insulating film on the surface of the source region, on the surface of the first trench and on a surface of exposed sections of the third insulating film and the fourth insulating film,
opening a predetermined site in the fifth insulating film to expose the source region,
opening the exposed source region to form a second trench so as to reach to the second conductive layer,
forming a sixth insulating film on a surface of the fifth insulating film and on a surface of the second trench,
removing a section of the sixth insulating film formed on the surface of the fifth insulating film and a section of the sixth insulating film formed on a surface of the center and its vicinity of a bottom surface of the second trench,
injecting impurities into a section of the second conductive layer below the fifth insulating film exposed on the bottom surface of the second trench,
forming a second conductive type of buried diffusion region by heating and diffusing the impurities,
removing the fifth insulating film and the sixth insulating film,
removing sections of the third insulating film and the fourth insulating film other than sections formed within the first trench deeper than a predetermined depth from the surface of the source region, and
forming a source electrode film on the surface of the source region, on the surface of the first trench and on the surface of the exposed sections of the third insulating film and the fourth insulating film.

19 more elements

A manufacturing method of a semiconductor device comprising:

forming a second conductive layer of a second conductive type that is an opposite type from a first conductive type over a range extending from a surface of a first conductive type of drain layer of a semiconductor substrate to a predetermined depth, said semiconductor substrate comprising said drain layer formed over a range from one of the main sides to a predetermined depth,
forming a first conductive type of source region over a range extending from a surface of the second conductive layer to a predetermined depth,
forming a first insulating film on a surface of the source region,
opening a predetermined site in the first insulating film to expose the source region,
opening the exposed source region to form a first trench so as to reach to the drain layer,
removing the first insulating film,
forming a second insulating film on the surface of the source region and on a surface of the first trench,
forming a gate electrode film on an inner surface of the second insulating film formed within the first trench,
removing a section of the second insulating film formed on the surface of the source region and a portion of a section of the second insulating film formed on the surface of the first trench,
forming a third insulating film on the surface of the source region, on the surface of the first trench and on a surface of exposed sections of the second insulating film and the gate electrode film,
forming a fourth insulating film on a surface of the third insulating film,
removing sections of the third insulating film and the fourth insulating film other than sections formed within the first trench deeper than a predetermined depth from the surface of the source region,
forming a fifth insulating film on the surface of the source region, on the surface of the first trench and on a surface of exposed sections of the third insulating film and the fourth insulating film,
opening a predetermined site in the fifth insulating film to expose the source region,
opening the exposed source region to form a second trench so as to reach to the second conductive layer,
forming a sixth insulating film on a surface of the fifth insulating film and on a surface of the second trench,
removing a section of the sixth insulating film formed on the surface of the fifth insulating film and a section of the sixth insulating film formed on a surface of the center and its vicinity of a bottom surface of the second trench,
injecting impurities into a section of the second conductive layer below the fifth insulating film exposed on the bottom surface of the second trench,
forming a second conductive type of buried diffusion region by heating and diffusing the impurities,
removing the fifth insulating film and the sixth insulating film,
removing sections of the third insulating film and the fourth insulating film other than sections formed within the first trench deeper than a predetermined depth from the surface of the source region, and
forming a source electrode film on the surface of the source region, on the surface of the first trench and on the surface of the exposed sections of the third insulating film and the fourth insulating film.

19 more elements

A manufacturing method of a semiconductor device comprising:

forming a second conductive layer of a second conductive type that is an opposite type from a first conductive type over a range extending from a surface of a first conductive type of drain layer, formed so as to be laminated onto a surface of a first conductive type of first conductive layer, to a predetermined depth,
forming a first insulating film on a surface of the second conductive layer,
opening a predetermined site in the first insulating film to expose the second conductive layer,
opening the exposed second conductive layer to form a first trench so as to reach to the drain layer,
removing the first insulating film,
forming a second insulating film on the surface of the second conductive layer and on a surface of the first trench,
forming a gate electrode film on an inner surface of the second insulating film formed within the first trench,
removing a section of the second insulating film formed on the surface of the second conductive layer and a portion of a section of the second insulating film formed on the surface of the first trench,
forming a first conductive type of source region over a range extending from the surface of the second conductive layer to a predetermined depth,
forming a third insulating film on a surface of the source region, on the surface of the first trench and on a surface of an exposed section of the gate electrode film,
forming a fourth insulating film on a surface of the third insulating film,
removing sections of the third insulating film and the fourth insulating film other than sections formed within the first trench deeper than a predetermined depth from the surface of the source region,
forming a fifth insulating film on the surface of the source region, on the surface of the first trench and on a surface of exposed sections of the third insulating film and the fourth insulating film,
opening a predetermined site in the fifth insulating film to expose the source region,
opening the exposed source region to form a second trench so as to reach to the second conductive layer,
forming a sixth insulating film on a surface of the fifth insulating film and on a surface of the second trench,
removing a section of the sixth insulating film formed on the surface of the fifth insulating film and a section of the sixth insulating film formed on a surface of the center and its vicinity of a bottom surface of the second trench,
injecting impurities into a section of the second conductive layer below the fifth insulating film exposed on the bottom surface of the second trench,
forming a second conductive type of buried diffusion region by heating and diffusing the impurities,
removing the fifth insulating film and the sixth insulating film,
removing sections of the third insulating film and the fourth insulating film other than sections formed within the first trench deeper than a predetermined depth from the surface of the source region, and
forming a source electrode film on the surface of the source region, on the surface of the first trench and on the surface of the exposed sections of the third insulating film and the fourth insulating film.

19 more elements

Dependencies are inferred from the claim text.

Facts

Application: 10/481,016Filed 17 Dec 2003
Priority: JP 2001-36564130 Nov 2001
Published: 2 Sep 2004
Term ends: Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10D 30/668
Vertical dmos [vdmos] fets: having trench gate electrodes, e.g. UMOS transistors
H10D 64/2527
For vertical or pseudo-vertical devices: for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
H10D 30/66
Double-diffused metal-oxide semiconductor [DMOS] FETs: vertical dmos [vdmos] fets
H10D 62/393
Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions: body regions of…

Family

US 7,102,182 B2Related patent
US 2004/0169220 A1This patent

From the US filing history. Foreign family members aren’t listed.

Timeline

Citations

Open elsewhere

USPTO full text and PDF
Patent Center file history
USPTO assignment records
Espacenet
Google Patents