Method and system for erasing a nitride memory device
AssigneeAdvanced Micro Devices, Inc.
InventorsMark W. Randolph, Chi Chang, Yi He, Wei Zheng, Edward F. Runnion, Zhizheng Liu
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Abstract
The present invention is a method and system for erasing a nitride memory device. In one embodiment of the present invention, an isolated P-well is formed in a semiconductor substrate. A plurality of N-type impurity concentrations are formed in the isolated P-well and a nitride memory cell is fabricated between two of the N-type impurity concentrations. Finally, an electrical contact is coupled to the isolated P-well.
Claims20
A semiconductor structure comprising:
- an isolated P-well formed in a semiconductor substrate;
- a plurality of N-type impurity concentrations formed in said isolated P-well;
- a nitride memory cell fabricated upon said isolated P-well and disposed between two of said N-type impurity concentrations;
- and
- an electrical contact coupled to said isolated P-well.
A method for fabricating a non-volatile memory device comprising
- forming an isolated P-well in a semiconductor substrate;
- forming a plurality of N-type impurity concentrations in said isolated P-well;
- fabricating a nitride memory cell upon said isolated P-well which is disposed between two of said N-type impurity concentrations;
- and
- coupling an electrical contact to said isolated P-well.
A method for erasing a memory device comprising:
- creating an isolated P-well in a semiconductor substrate
- fabricating a nitride memory cell upon said isolated P-well, wherein said nitride memory cell is disposed between two N-type impurity concentrations formed in said isolated P-well;
- coupling an electrical contact to said isolated P-well;
- and
- conducting an erase voltage between said nitride memory cell and said electrical contact via said isolated P-well.
Dependencies are inferred from the claim text.