Integrated circuit devices having contact holes exposing gate electrodes in active regions and methods of fabricating the same

A method of forming an integrated circuit device comprising:

• forming an integrated circuit substrate;
• forming first, second and third spaced apart insulating regions in the integrated circuit substrate that define first and second active regions;
• forming a first gate electrode on the first active region, the first gate electrode having a first portion on the first active region that extends onto the first insulating region and a second portion at an end of the first portion on the first insulating region;
• forming a second gate electrode on the second active region;
• and
• forming an insulating layer on the first, second and third insulating regions defining a first gate contact hole that exposes at least a portion of the second portion of the first gate electrode, the first gate electrode being free of a gate contact hole on the first portion, and a second gate contact hole on the second active region that exposes at least a portion of the second gate electrode.

An integrated circuit device comprising:

• an integrated circuit substrate having a short channel MOS transistor region and a long channel MOS transistor region;
• a device isolation layer formed at a predetermined region of the semiconductor substrate to define a first active region and a second active region in the short channel MOS transistor region and the long channel MOS transistor region respectively;
• a short channel gate electrode crossing over the first active region;
• a long channel gate electrode crossing over the second active region, the long channel gate electrode having a greater width than the short channel gate electrode;
• a first gate insulating layer interposed between the short channel gate electrode and the first active region;
• a second gate insulating layer interposed between the long channel gate electrode and the second active region;
• and
• at least one direct gate contact hole exposing the long channel gate electrode, the at least one direct gate contact hole being located over the second active region.