Semiconductor pressure sensor device
OwnerMasato Ueno, Yoshifumi Watanabeinventors
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Abstract
A semiconductor pressure sensor device has a fully-filling gel structure including a sensor chip for detecting a pressure and generating an electrical signal corresponding to the pressure. This sensor chip of the sensor device is connected with a conductive member such as a terminal using a bonding wire. The sensor chip and bonding wire are covered by a protective member that has characteristics of electric insulation and plasticity. Here, the bonding wire is formed of an alloy of Au and Pd. This structure using a bonding wire of an Au-Pd alloy enables wire strength to be enhanced without the wire diameter being largely increased in comparison with a conventional one.
Claims4
A semiconductor pressure sensor device comprising:
- a conductive member;
- a sensor chip for detecting a pressure and generating an electrical signal corresponding to the pressure;
- a bonding wire electrically connecting the sensor chip and the conductive member;
- and
- a protective member having characteristics of electric insulation and plasticity and covering the sensor chip and the bonding wire,
- wherein the bonding wire is formed of an alloy of Au and Pd.
Dependencies are inferred from the claim text.